Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si(100)∕SiO2 interfaces
2018 ◽
Vol 510
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pp. 596-602
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2013 ◽
Vol 69
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pp. 261-266
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2013 ◽
Vol 48
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pp. 54-71
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2013 ◽
Vol 557
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pp. 5-10
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2016 ◽
Vol 123
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pp. 131-138
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2015 ◽
Vol 201
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pp. 130-134
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