Electron Transport on Hydrogen-Passivated Silicon Surfaces

2005 ◽  
Author(s):  
K. Eng
Keyword(s):  
Electron Transport ◽  
Silicon Surfaces ◽  
Passivated Silicon

Bromine functionalized molecular adlayers on hydrogen passivated silicon surfaces

2006 ◽  
Vol 326 (1) ◽  
pp. 144-150 ◽  
Author(s):  
R. Basu ◽  
C.R. Kinser ◽  
J.D. Tovar ◽  
M.C. Hersam
Keyword(s):  
Silicon Surfaces ◽  
Passivated Silicon

Laser assisted field induced oxide nanopatterning of hydrogen passivated silicon surfaces

2007 ◽  
Vol 91 (7) ◽  
pp. 073110 ◽  
Author(s):  
L. S. C. Pingree ◽  
M. J. Schmitz ◽  
D. E. Kramer ◽  
M. C. Hersam
Keyword(s):  
Silicon Surfaces ◽  
Passivated Silicon

scholarly journals Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces

2016 ◽  
Vol 28 (11) ◽  
pp. 3634-3640 ◽  
Author(s):  
Thibault Alphazan ◽  
Laurent Mathey ◽  
Martin Schwarzwälder ◽  
Tsung-Han Lin ◽  
Aaron J. Rossini ◽  
...  
Keyword(s):  
Silicon Surfaces ◽  
Phosphorus Precursor ◽  
Passivated Silicon

Charge carrier trapping at passivated silicon surfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064505 ◽  
Author(s):  
Johannes Seiffe ◽  
Marc Hofmann ◽  
Jochen Rentsch ◽  
Ralf Preu
Keyword(s):  
Charge Carrier ◽  
Silicon Surfaces ◽  
Carrier Trapping ◽  
Passivated Silicon ◽  
Charge Carrier Trapping

Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces

2011 ◽  
Vol 605 (13-14) ◽  
pp. 1308-1312 ◽  
Author(s):  
Sushobhan Avasthi ◽  
Yabing Qi ◽  
Grigory K. Vertelov ◽  
Jeffrey Schwartz ◽  
Antoine Kahn ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Alignment ◽  
Silicon Surfaces ◽  
Passivated Silicon

Anomalous behaviour of the electron transport on (110) and (111) silicon surfaces

1980 ◽  
Vol 98 (1-3) ◽  
pp. 407-412 ◽  
Author(s):  
G. Dorda ◽  
H. Gesch ◽  
I. Eisele
Keyword(s):  
Electron Transport ◽  
Anomalous Behaviour ◽  
Silicon Surfaces

Metastable-atom-stimulated desorption from hydrogen-passivated silicon surfaces

2003 ◽  
Vol 528 (1-3) ◽  
pp. 91-96 ◽  
Author(s):  
Yasushi Yamauchi ◽  
Xin Ju ◽  
Taku Suzuki ◽  
Mitsunori Kurahashi
Keyword(s):  
Metastable Atom ◽  
Silicon Surfaces ◽  
Passivated Silicon

Molecular Beam Epitaxy of ZnS Films on Arsenic Passivated Silicon Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
Xiaochuan Zhou ◽  
Wiley P. Kirk
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Energy ◽  
Silicon Surfaces ◽  
Crystalline Quality ◽  
Dimensional Growth ◽  
Initial Adsorption ◽  
Passivated Silicon ◽  
Zns Films

ABSTRACTThe crystalline quality of ZnS films grown on arsenic covered Si(100) surfaces is shown to be improved as compared to films grown on bare silicon surfaces by MBE (molecular beam epitaxy). Employing RGA (residual gas analyzer) and RHEED (reflection high energy electron diffraction) techniques, we found that a strong initial adsorption of sulfur on bare silicon surfaces led to the formation of disordered silicon-sulfide surfaces. This disordered surface initiated three-dimensional growth of ZnS and resulted in poor crystalline quality. An arsenic overlayer was found to be effective in preventing the interaction of sulfur with the silicon surface and thereby maintained surface ordering. X-ray rocking curve analysis indicated higher crystallinity in ZnS films grown on arsenic covered surfaces.

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