Molecular Beam Epitaxy of ZnS Films on Arsenic Passivated Silicon Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
Xiaochuan Zhou ◽  
Wiley P. Kirk
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Energy ◽  
Silicon Surfaces ◽  
Crystalline Quality ◽  
Dimensional Growth ◽  
Initial Adsorption ◽  
Passivated Silicon ◽  
Zns Films

ABSTRACTThe crystalline quality of ZnS films grown on arsenic covered Si(100) surfaces is shown to be improved as compared to films grown on bare silicon surfaces by MBE (molecular beam epitaxy). Employing RGA (residual gas analyzer) and RHEED (reflection high energy electron diffraction) techniques, we found that a strong initial adsorption of sulfur on bare silicon surfaces led to the formation of disordered silicon-sulfide surfaces. This disordered surface initiated three-dimensional growth of ZnS and resulted in poor crystalline quality. An arsenic overlayer was found to be effective in preventing the interaction of sulfur with the silicon surface and thereby maintained surface ordering. X-ray rocking curve analysis indicated higher crystallinity in ZnS films grown on arsenic covered surfaces.

ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

Facet Formation of Lineshaped Silicon Mesas Grown with Micro Shadow Masks

1994 ◽  
Vol 351 ◽  
Author(s):  
H. Gossner ◽  
G. Fehlauer ◽  
W. Kiunke ◽  
I. Eisele ◽  
M. Stolz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Temperature Dependent ◽  
Adatom Diffusion ◽  
Substrate Side ◽  
Side Walls ◽  
Dimensional Growth ◽  
Facet Formation

ABSTRACTAs reported previously, perfect facets can be achieved at the side walls of submicron silicon mesa structures grown by molecular beam epitaxy (MBE) with micro shadow masks [1]. An essentially self organizing, three-dimensional growth was observed. In this paper we present the results of the epitaxial growth on (001) substrates using long (≥ 1μm), lineshaped mask apertures, which put constraints on the formation of facets. At a growth temperature of 500°C {111} facet formation is observed for lineshaped mesas oriented along the <110> direction of the substrate. Side walls with a length of I μm are perfectly plane, while mesas with a length of 10 μm and more show rough sidewalls. This is explained by a limited silicon adatom diffusion on the facet. For higher flux rates the facet formation is suppressed. This can be understood in terms of a reduced adatom diffusion.A crossover from {111} to {113} facet formation is observed at growth temperatures above 500°C. A model for the temperature dependent formation of {111} and {113} facets is given.

Molecular Beam Epitaxial Growth of ZnSe, ZnSSe and ZnMnSSe Layers on GaAs Substrates for Blue-Green Laser Structures

1995 ◽  
Vol 417 ◽  
Author(s):  
Y. P. Chen ◽  
M. Saginur ◽  
C. C. Kim ◽  
S. Sivananthan ◽  
D. J. Smith ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Energy Gap ◽  
Three Dimensional ◽  
High Energy ◽  
Green Laser ◽  
Initial Growth ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Dimensional Growth ◽  
Molecular Beam Epitaxial Growth

AbstractSingle layers of ZnSe, ZnSxSe1−x., and Znl−y.MnySxSe1−x., were grown on the GaAs(001). Realtime reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnSxSe1−x., and Znl−y.MnySxSe1−x., (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility.

Ge Segregation and Surface Roughening During Si Growth on Ge(001)2×l by Gas-Source Molecular Beam Epitaxy from Si2H6

1992 ◽  
Vol 280 ◽  
Author(s):  
R. Tsu ◽  
D.-S. Lin ◽  
J. E. Greene ◽  
T.-C. Chiang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Energy ◽  
Single Step ◽  
Scanning Tunneling ◽  
Island Growth ◽  
Tunneling Microscopy ◽  
Compositional Evolution ◽  
Gas Source

ABSTRACTSurface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular-beam epitaxy (GSMBE) from Si2H6 has been investigated using in-situ reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy (AES), electron energy-loss spectroscopy (EELS), and scanning tunneling microscopy (STM). At 550 °C, single-step-height island growth was observed for nominal Si deposition thicknesses tsi up to ≃ 1.5 ML. The islands were essentially pure Ge which segregated to the surface as H was desorbed. At higher tsi, the Ge coverage decreased, the surface roughened, and two-dimensional multi-layer island growth was observed for tSi up to ≃8 ML above which three-dimensional island growth was obtained. For thick layers (t S: 75 ML), no Ge was detected at the surface.

Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode

2000 ◽  
Vol 9 (3-6) ◽  
pp. 506-511 ◽  
Author(s):  
B. Daudin ◽  
G. Feuillet ◽  
Guido Mula ◽  
H. Mariette ◽  
J.L. Rouvière ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Growth Mode ◽  
Dimensional Growth
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