Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces

2011 ◽  
Vol 605 (13-14) ◽  
pp. 1308-1312 ◽  
Author(s):  
Sushobhan Avasthi ◽  
Yabing Qi ◽  
Grigory K. Vertelov ◽  
Jeffrey Schwartz ◽  
Antoine Kahn ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Alignment ◽  
Silicon Surfaces ◽  
Passivated Silicon

scholarly journals Band alignment of monolayer CaP3, CaAs3, BaAs3 and the role of p–d orbital interactions in the formation of conduction band minima

2021 ◽  
Vol 23 (12) ◽  
pp. 7418-7425
Author(s):  
Magdalena Laurien ◽  
Himanshu Saini ◽  
Oleg Rubel
Keyword(s):  
Electronic Structure ◽  
Conduction Band ◽  
Electron Affinity ◽  
Band Alignment ◽  
Orbital Interactions

We calculate the band alignment of the newly predicted phosphorene-like puckered monolayers with G0W0 according to the electron affinity rule and examine trends in the electronic structure. Our results give guidance for heterojunction design.

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Bromine functionalized molecular adlayers on hydrogen passivated silicon surfaces

2006 ◽  
Vol 326 (1) ◽  
pp. 144-150 ◽  
Author(s):  
R. Basu ◽  
C.R. Kinser ◽  
J.D. Tovar ◽  
M.C. Hersam
Keyword(s):  
Silicon Surfaces ◽  
Passivated Silicon

scholarly journals Electronic structure and band alignment of zinc nitride, Zn3N2

RSC Advances ◽  
2014 ◽  
Vol 4 (7) ◽  
pp. 3306-3311 ◽  
Author(s):  
Su-Hyun Yoo ◽  
Aron Walsh ◽  
David O. Scanlon ◽  
Aloysius Soon
Keyword(s):  
Electronic Structure ◽  
Band Alignment ◽  
Zinc Nitride

Tunable type-II band alignment and electronic structure of C3N4/MoSi2N4 heterostructure: Interlayer coupling and electric field

2022 ◽  
Vol 105 (4) ◽  
Author(s):  
Cuong Q. Nguyen ◽  
Yee Sin Ang ◽  
Son-Tung Nguyen ◽  
Nguyen V. Hoang ◽  
Nguyen Manh Hung ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Interlayer Coupling ◽  
Band Alignment ◽  
Type Ii

Energy band alignment at the heterointerface between a nanostructured TiO2 layer and Au22(SG)18 clusters: relevance to metal-cluster-sensitized solar cells

Nanoscale ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 175-184
Author(s):  
Liudmila L. Larina ◽  
Oleksii Omelianovych ◽  
Van-Duong Dao ◽  
Kyunglim Pyo ◽  
Dongil Lee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Solar Cells ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Metal Cluster ◽  
Band Alignment ◽  
Tio2 Layer ◽  
Electronic Band ◽  
Xps Study ◽  
Sensitized Solar Cells

XPS study of the electronic structure of the Au22(SG)18 clusters and their interface with TiO2 reveals that tailoring of the electronic band structure at the interface can be exploited to increase the efficiency of metal-cluster-sensitized solar cells.

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