Giant tunneling magnetoresistance effect in low-resistance CoFeB∕MgO(001)∕CoFeB magnetic tunnel junctions for read-head applications

2005 ◽  
Vol 87 (7) ◽  
pp. 072503 ◽  
Author(s):  
Koji Tsunekawa ◽  
David D. Djayaprawira ◽  
Motonobu Nagai ◽  
Hiroki Maehara ◽  
Shinji Yamagata ◽  
...  
2005 ◽  
Vol 136 (11-12) ◽  
pp. 611-615 ◽  
Author(s):  
Rie Matsumoto ◽  
Yusuke Hamada ◽  
Masaki Mizuguchi ◽  
Masashi Shiraishi ◽  
Hiroki Maehara ◽  
...  

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.


2007 ◽  
Vol 90 (25) ◽  
pp. 252506 ◽  
Author(s):  
Rie Matsumoto ◽  
Akio Fukushima ◽  
Taro Nagahama ◽  
Yoshishige Suzuki ◽  
Koji Ando ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Xiaolin Zhang ◽  
Baishun Yang ◽  
Xiaoyan Guo ◽  
Xiufeng Han ◽  
Yu Yan

Schematics of TMR effect of FGT/CrI3/FGT and FGT/ScI3/FGT vdW MTJs.


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