Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a SiO2-patterned (001) substrate by molecular-beam epitaxy

2005 ◽  
Vol 98 (11) ◽  
pp. 114312 ◽  
Author(s):  
S. C. Lee ◽  
L. R. Dawson ◽  
S. R. J. Brueck ◽  
Y.-B. Jiang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Epitaxy ◽  
Patterned Growth ◽  
Gaas Nanowires

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

scholarly journals Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

2018 ◽  
Vol 30 (6) ◽  
pp. 065602 ◽  
Author(s):  
Suzanne Lancaster ◽  
Heiko Groiss ◽  
Tobias Zederbauer ◽  
Aaron M Andrews ◽  
Donald MacFarland ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Axial Growth

scholarly journals Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

2010 ◽  
Vol 82 (3) ◽  
Author(s):  
G. E. Cirlin ◽  
V. G. Dubrovskii ◽  
Yu. B. Samsonenko ◽  
A. D. Bouravleuv ◽  
K. Durose ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires

scholarly journals Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

2010 ◽  
Vol 5 (10) ◽  
pp. 1692-1697 ◽  
Author(s):  
X. Zhang ◽  
V. G. Dubrovskii ◽  
N. V. Sibirev ◽  
G. E. Cirlin ◽  
C. Sartel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Theory And Experiment

scholarly journals GaAs nanowires by Mn-catalysed molecular beam epitaxy

2007 ◽  
Vol 61 ◽  
pp. 992-996 ◽  
Author(s):  
S Rubini ◽  
M Piccin ◽  
G Bais ◽  
F Jabeen ◽  
F Martelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires

Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

2017 ◽  
Vol 38 (10) ◽  
pp. 103001 ◽  
Author(s):  
Lixia Li ◽  
Dong Pan ◽  
Xuezhe Yu ◽  
Hyok So ◽  
Jianhua Zhao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Morphology And Structure

GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy

2006 ◽  
Vol 89 (5) ◽  
pp. 053106 ◽  
Author(s):  
Soo-Ghang Ihn ◽  
Jong-In Song ◽  
Young-Hun Kim ◽  
Jeong Yong Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gaas Nanowires
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