Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

Effect of Ga Pre-Deposition Rate on GaAs Nanowires Grown by Self-Assisted VLS Method Using MBE on SiO2/Si(111) Substrates

2015 ◽  
Vol 1131 ◽  
pp. 12-15
Author(s):  
Samatcha Vorathamrong ◽  
Patchareewan Prongjit ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan ◽  
Piyasan Praserthdam ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Deposition Rate ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Vapor Liquid Solid ◽  
X Ray ◽  
Gaas Nanowires ◽  
Scanning Electron

We report on the study on effect of Ga pre-deposition rate on GaAs nanowires grown by self-assisted vapor-liquid-solid (VLS) method. Ga droplets were initially deposited on the surface of Si(111) substrates covered with thin layer of SiO2. The nanowires were grown by molecular beam epitaxy (MBE). Dependency of structural of nanowires on Ga pre-deposition rate is investigated by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction Analysis (XRD). The experimental results show that the different in Ga pre-deposition rate significantly affect the surface morphology of samples. Growth rate and the density of nanowires strongly depends on the Ga pre-deposition rate.

Controlling the Growth of ZnO-SiO2 Nanostructures Using Pt-Coated Si Substrate

2014 ◽  
Vol 548-549 ◽  
pp. 354-357 ◽  
Author(s):  
Amber Dea Marie V. Peguit ◽  
Rolando T. Candidato ◽  
Reynaldo M. Vequizo ◽  
Majvell Kay G. Odarve ◽  
Bianca Rae B. Sambo ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Active Sites ◽  
Zno Nanostructures ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Scanning Electron ◽  
Pronounced Peak

ZnO-SiO2 nanostructures were grown on both bare Si and Pt-coated Si substrates via chemical bath deposition (CBD). The grown nanostructures were characterized using Scanning Electron Microscope with Energy Dispersive X-ray Spectroscopy (SEM-EDS), Fourier Transform Infrared (FTIR) measurement and Ultraviolet-Visible (UV-Vis) absorption spectroscopy. Surface morphology results revealed that Pt-coated Si substrate have promoted the growth of ZnO-SiO2 nanostructures by providing more active sites for nucleation thus formation ZnO-SiO2 nanostructures were observed. It is believed that SiO2 will adhere to the non-polar sides of the grown ZnO nanostructures. This result is manifested in the FTIR spectra which showed a pronounced peak corresponding to ZnO-SiO2 grown on bare Si suggesting that more Si-O bonds are present. However, Pt-coating did not significantly affect the band gap of the grown ZnO-SiO2 nanostructures.

Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

2009 ◽  
Vol 311 (7) ◽  
pp. 1754-1757 ◽  
Author(s):  
Tien Khee Ng ◽  
Soon Fatt Yoon ◽  
Kian Hua Tan ◽  
Kah Pin Chen ◽  
Hendrix Tanoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate
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