Resolution blur of latent acid image and acid generation efficiency of chemically amplified resists for electron beam lithography

Journal of Applied Physics ◽

10.1063/1.2173689 ◽

2006 ◽

Vol 99 (5) ◽

pp. 054509 ◽

Author(s):

Takahiro Kozawa ◽

Seiichi Tagawa

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Generation Efficiency ◽

Acid Generation ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Basic aspects of acid generation processes in chemically amplified resists for electron beam lithography

10.1117/12.600150 ◽

2005 ◽

Author(s):

Takahiro Kozawa ◽

Seiichi Tagawa

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Acid Generation ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Proximity correction of chemically amplified resists for electron beam lithography

Microelectronic Engineering ◽

10.1016/s0167-9317(98)00041-0 ◽

1998 ◽

Vol 41-42 ◽

pp. 183-186 ◽

Author(s):

Zheng Cui ◽

Philp D Prewett

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1619959 ◽

2003 ◽

Vol 21 (6) ◽

pp. 3149 ◽

Author(s):

Takahiro Kozawa ◽

Akinori Saeki ◽

Atsuro Nakano ◽

Yoichi Yoshida ◽

Seiichi Tagawa

Keyword(s):

Electron Beam ◽

Reaction Mechanism ◽

Spatial Resolution ◽

Electron Beam Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1484099 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1303 ◽

Author(s):

G. P. Patsis ◽

N. Glezos

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Gel Formation ◽

Formation Theory ◽

Chemically Amplified ◽

Negative Tone ◽

Chemically Amplified Resists

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Application of a New Empirical Model to the Electron Beam Lithography Process with Chemically Amplified Resists

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6761 ◽

1998 ◽

Vol 37 (Part 1, No. 12B) ◽

pp. 6761-6766 ◽

Author(s):

Young-Mog Ham ◽

Ki-Ho Baik ◽

Won-Gyu Lee ◽

Tack Dong Chung ◽

Kukjin Chun

Keyword(s):

Electron Beam ◽

Empirical Model ◽

Electron Beam Lithography ◽

Lithography Process ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Some peculiarities of resist-profile simulation for positive-tone chemically amplified resists in electron-beam lithography

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3043467 ◽

2009 ◽

Vol 27 (1) ◽

pp. 52 ◽

Author(s):

K. Vutova ◽

E. Koleva ◽

G. Mladenov ◽

I. Kostic

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Dependence of acid generation efficiency on the protection ratio of hydroxyl groups in chemically amplified electron beam, x-ray and EUV resists

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1813452 ◽

2004 ◽

Vol 22 (6) ◽

pp. 3522 ◽

Author(s):

Hiroki Yamamoto ◽

Takahiro Kozawa ◽

Atsuro Nakano ◽

Kazumasa Okamoto ◽

Seiichi Tagawa ◽

...

Keyword(s):

Electron Beam ◽

Hydroxyl Groups ◽

Generation Efficiency ◽

X Ray ◽

Acid Generation ◽

Chemically Amplified ◽

Protection Ratio

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Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.4301 ◽

1992 ◽

Vol 31 (Part 1, No. 12B) ◽

pp. 4301-4306 ◽

Author(s):

Takahiro Kozawa ◽

Yoichi Yoshida ◽

Mitsuru Uesaka ◽

Seiichi Tagawa

Keyword(s):

Electron Beam ◽

X Ray ◽

Acid Generation ◽

Chemically Amplified ◽

Radiation Induced ◽

Chemically Amplified Resists

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Theoretical study on protected unit fluctuation of chemically amplified resists used for photomask production by electron beam lithography

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab5d6a ◽

2020 ◽

Vol 59 (1) ◽

pp. 016503

Author(s):

Takahiro Kozawa ◽

Takao Tamura

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Theoretical Study ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography

10.1117/12.2574963 ◽

2020 ◽

Author(s):

Naoki Maeda ◽

Akihiro Konda ◽

Kazumasa Okamoto ◽

Takahiro Kozawa ◽

Takao Tamura

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Thickness Dependence ◽

Chemically Amplified ◽

Chemically Amplified Resists

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