Substrate-induced strain effects on the transport properties of pulsed laser-deposited Nb-doped SrTiO3 films

2006 ◽  
Vol 88 (14) ◽  
pp. 142903 ◽  
Author(s):  
W. Ramadan ◽  
S. B. Ogale ◽  
S. Dhar ◽  
S. X. Zhang ◽  
D. C. Kundaliya ◽  
...  
1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev

2018 ◽  
Vol 1 (11) ◽  
pp. 5879-5886
Author(s):  
Manju Bala ◽  
Anha Masarrat ◽  
Anuradha Bhogra ◽  
R. C. Meena ◽  
Ying-Rui Lu ◽  
...  

Author(s):  
Hua Li ◽  
Gang Li

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.


2006 ◽  
Vol 39 (1-4) ◽  
pp. 282-290 ◽  
Author(s):  
J.A. Sans ◽  
A. Segura ◽  
J.F. Sánchez-Royo ◽  
V. Barber ◽  
M.A. Hernández-Fenollosa ◽  
...  

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