80% tunneling magnetoresistance at room temperature for thin Al–O barrier magnetic tunnel junction with CoFeB as free and reference layers

2007 ◽  
Vol 101 (9) ◽  
pp. 09B501 ◽  
Author(s):  
H. X. Wei ◽  
Q. H. Qin ◽  
M. Ma ◽  
R. Sharif ◽  
X. F. Han
2006 ◽  
Vol 89 (20) ◽  
pp. 202502 ◽  
Author(s):  
J. Joshua Yang ◽  
Chengxiang Ji ◽  
Y. Austin Chang ◽  
Xianglin Ke ◽  
M. S. Rzchowski

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.


2019 ◽  
Vol 12 (2) ◽  
pp. 023009 ◽  
Author(s):  
Toshiki Kanaki ◽  
Shin Matsumoto ◽  
Sai Krishna Narayananellore ◽  
Hidekazu Saito ◽  
Yoshihiro Iwasa ◽  
...  

2019 ◽  
Vol 11 (19) ◽  
pp. 17647-17653 ◽  
Author(s):  
Jiaqi Zhou ◽  
Junfeng Qiao ◽  
Chun-Gang Duan ◽  
Arnaud Bournel ◽  
Kang L. Wang ◽  
...  

2014 ◽  
Vol 115 (17) ◽  
pp. 17C739
Author(s):  
Chang Soo Kim ◽  
Jin-Won Jung ◽  
Dooho Choi ◽  
Masashi Sahashi ◽  
Mark H. Kryder

2022 ◽  
Author(s):  
Sai Li ◽  
Ao Du ◽  
Yadong Wang ◽  
Xinran Wang ◽  
Xueying Zhang ◽  
...  

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