scholarly journals Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature

2022 ◽  
Author(s):  
Sai Li ◽  
Ao Du ◽  
Yadong Wang ◽  
Xinran Wang ◽  
Xueying Zhang ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Experimental Demonstration

Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal
Keyword(s):  
Boron Nitride ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Valve Effect ◽  
First Time

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

Double Magnetic Tunnel Junction with switchable assistance layer for improved spin transfer torque magnetic memory performance

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Sanchez Hazen ◽  
Stephane Auffret ◽  
Isabelle Joumard ◽  
Laurent Vila ◽  
Liliana Buda-Prejbeanu ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Memory Performance ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Memory ◽  
Memory Cells ◽  
Experimental Demonstration

This paper reports the first experimental demonstration of a new concept of double magnetic tunnel junction comprising a magnetically switchable assistance layer. These double junctions are used as memory cells...

Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation

2019 ◽  
Vol 12 (2) ◽  
pp. 023009 ◽  
Author(s):  
Toshiki Kanaki ◽  
Shin Matsumoto ◽  
Sai Krishna Narayananellore ◽  
Hidekazu Saito ◽  
Yoshihiro Iwasa ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Current Modulation ◽  
Temperature Side

scholarly journals A magnetic tunnel junction with an L21-ordered Co2FeSi electrode formed by all room-temperature fabrication processes

2014 ◽  
Vol 557 ◽  
pp. 386-389 ◽  
Author(s):  
Yuichi Fujita ◽  
Shinya Yamada ◽  
Yuya Maeda ◽  
Masanobu Miyao ◽  
Kohei Hamaya
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction

Room Temperature Current Suppression on Magnetic Tunnel Junction Based Molecular Spintronics Devices

2013 ◽  
Vol 1507 ◽  
Author(s):  
Pawan Tyagi
Keyword(s):  
Tunnel Junction ◽  
Exchange Coupling ◽  
Room Temperature ◽  
Spin Transport ◽  
Magnetic Tunnel Junction ◽  
Test Bed ◽  
Force Microscopy ◽  
Molecular Spintronics ◽  
Ferromagnetic Electrodes ◽  
Strong Exchange

ABSTRACTMolecular conduction channels between two ferromagnetic electrodes can produce strong exchange coupling and dramatic effect on the spin transport, thus enabling the realization of novel logic and memory devices. To realize such device, we produced Multilayer Edge Molecular Spintronics Devices (MEMSDs) by bridging the organometallic molecular clusters (OMCs) across a ∼2 nm thick insulator of a magnetic tunnel junction (MTJ), along its exposed side edges. These MEMSDs exhibited unprecedented increase in exchange coupling between ferromagnetic films and dramatic changes in the spin transport. This paper focuses on the dramatic current suppression phenomenon exhibited by MEMSDs at room temperature. In the event of current suppression, the effective MEMESDs’ current reduced by as much as six orders in magnitude as compared to the leakage current level of a MTJ test bed. Current suppression phenomenon was found to be associated with the equally dramatic changes in the MTJ test beds due to OMCs. Role of OMC in changing MTJ test bed properties was determined by the three different types of magnetic characterizations: SQUID Magnetometer, Ferromagnetic Resonance, and Magnetic Force Microscopy. Observation of current suppression by independent research groups and supporting studies on similar systems will be crucially important to unequivocally establish the utility of MEMSD approach.

Over 70% tunneling magnetoresistance at room temperature for a CoFe and AlOx based magnetic tunnel junction

2006 ◽  
Vol 89 (20) ◽  
pp. 202502 ◽  
Author(s):  
J. Joshua Yang ◽  
Chengxiang Ji ◽  
Y. Austin Chang ◽  
Xianglin Ke ◽  
M. S. Rzchowski
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance
Sign in / Sign up

Export Citation Format

Share Document