Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

2008 ◽  
Vol 103 (7) ◽  
pp. 07A911 ◽  
Author(s):  
Hideto Ohmori ◽  
Tomoya Hatori ◽  
Shigeki Nakagawa
Keyword(s):  
Barrier Layer ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance ◽  
Magnetoresistance Ratio

Over 70% tunneling magnetoresistance at room temperature for a CoFe and AlOx based magnetic tunnel junction

2006 ◽  
Vol 89 (20) ◽  
pp. 202502 ◽  
Author(s):  
J. Joshua Yang ◽  
Chengxiang Ji ◽  
Y. Austin Chang ◽  
Xianglin Ke ◽  
M. S. Rzchowski
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance

Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal
Keyword(s):  
Boron Nitride ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Valve Effect ◽  
First Time

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation

2019 ◽  
Vol 12 (2) ◽  
pp. 023009 ◽  
Author(s):  
Toshiki Kanaki ◽  
Shin Matsumoto ◽  
Sai Krishna Narayananellore ◽  
Hidekazu Saito ◽  
Yoshihiro Iwasa ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Current Modulation ◽  
Temperature Side
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