Epitaxial growth of sol-gel derived BiScO3–PbTiO3 thin film on Nb-doped SrTiO3 single crystal substrate

2007 ◽  
Vol 90 (20) ◽  
pp. 202902 ◽  
Author(s):  
Hai Wen ◽  
Xiaohui Wang ◽  
Caifu Zhong ◽  
Like Shu ◽  
Longtu Li
2009 ◽  
Vol 311 (8) ◽  
pp. 2251-2254 ◽  
Author(s):  
Mitsuru Ohtake ◽  
Yuri Nukaga ◽  
Fumiyoshi Kirino ◽  
Masaaki Futamoto

2007 ◽  
Vol 93 (1) ◽  
pp. 154-160 ◽  
Author(s):  
P. YUN ◽  
D. Y. WANG ◽  
Z. YING ◽  
Z. T. SONG ◽  
S. L. FENG ◽  
...  

2016 ◽  
Vol 697 ◽  
pp. 235-238
Author(s):  
Yun Yi Wu ◽  
Xiao Hui Wang ◽  
Cai Fu Zhong ◽  
Long Tu Li

Sc-doped (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO3 [100] (Nb:STO) single crystal substrate via an aqueous sol–gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 μC/cm2 and typical butterfly shape displacement–voltage loop with effective piezoelectric coefficient d33* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.


2014 ◽  
Vol 50 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Mitsuru Ohtake ◽  
Daisuke Suzuki ◽  
Masaaki Futamoto ◽  
Fumiyoshi Kirino ◽  
Nobuyuki Inaba

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