Direct Determination of Stress in a Thin Film Deposited On a Single-Crystal Substrate from an X-Ray Topographic Image

1982 ◽  
pp. 255-258 ◽  
Author(s):  
Wayne S. Berry
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Direct Determination ◽  
Single Crystal Substrate ◽  
Topographic Image ◽  
X Ray ◽  
Crystal Substrate

Direct Determination of Stress in a Thin Film Deposited on a Single-Crystal Substrate from an X-Ray Topographic Image

1982 ◽  
Vol 26 ◽  
pp. 255-258 ◽  
Author(s):  
Wayne S. Berry
Keyword(s):  
Thin Film ◽  
Plastic Deformation ◽  
Single Crystal ◽  
Semiconductor Industry ◽  
Direct Determination ◽  
Single Crystal Substrate ◽  
Topographic Image ◽  
X Ray ◽  
Crystal Substrate

AbstractX-ray topography is one of several methods used by the semiconductor industry to measure stress of thin films deposited on single crystal substrates. A procedure to determine stress values directly from the X-ray topographic image by measuring the separation of the Kα1-Kα2 X-ray peaks is reviewed. Although less sensitive than the single-crystal technique, it has been found applicable to monitor stress levels in films such as CVD silicon nitride on silicon wafers. This technique may also be used to quantify the plastic deformation of wafers that is induced by semiconductor processes.

IN-PLANE DIELECTRIC PROPERTIES OF EPITAXIAL Ba(Zr0.3Ti0.7)O3 THIN FILM GROWN ON LSAT (001) SINGLE CRYSTAL SUBSTRATE

2007 ◽  
Vol 93 (1) ◽  
pp. 154-160 ◽  
Author(s):  
P. YUN ◽  
D. Y. WANG ◽  
Z. YING ◽  
Z. T. SONG ◽  
S. L. FENG ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Effect of Composition on the Ordered Phase Formation in Co-Pt Thin Film Deposited on MgO(111) Single-Crystal Substrate

2014 ◽  
Vol 50 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Mitsuru Ohtake ◽  
Daisuke Suzuki ◽  
Masaaki Futamoto ◽  
Fumiyoshi Kirino ◽  
Nobuyuki Inaba
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Phase Formation ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Epitaxial growth of sol-gel derived BiScO3–PbTiO3 thin film on Nb-doped SrTiO3 single crystal substrate

2007 ◽  
Vol 90 (20) ◽  
pp. 202902 ◽  
Author(s):  
Hai Wen ◽  
Xiaohui Wang ◽  
Caifu Zhong ◽  
Like Shu ◽  
Longtu Li
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Sol Gel ◽  
Single Crystal Substrate ◽  
Pbtio3 Thin Film ◽  
Crystal Substrate

The Kinetics of Ni-Al Spinel Growth Using Rutherford Backscattering Spectroscopy

1987 ◽  
Vol 94 ◽  
Author(s):  
Y. Kouh Simpson ◽  
E. G. Colgan ◽  
C. B. Carter
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Single Crystal ◽  
Reaction Rate Constant ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Complementary Techniques ◽  
Kinetics Of

ABSTRACTUsing a planar thin-film specimen geometry, the growth kinetics of the spinel in NiOAl2O3 system has been studied with Rutherford backscattering spectroscopy. A thin-layer of Ni film is deposited by the electron-beam deposition technique onto single-crystal alumina substrates of different orientations including, (0001), {1120}, {1102} and {1100}. The subsequent heat-treatment in air then converts the Ni to NiO, thus producing a uniform layer of NiO with good adhesion between the NiO and the alumina. The kinetics of the Ni-Al spinel growth has been found to be different for different single-crystal substrate orientations. The kinetics behavior follows a parabolic growth-rate law for each orientation but shows a different reaction-rate constant. X-ray diffraction and transmission electron microscopy have been used as complementary techniques to confirm the phases that form at each stage of the heat treatment and the corresponding microstructures of the thin-film layers respectively.

scholarly journals X-ray strain analysis of {111} fiber-textured thin films independent of grain-interaction models

2011 ◽  
Vol 44 (2) ◽  
pp. 409-413 ◽  
Author(s):  
D. Faurie ◽  
P.-O. Renault ◽  
E. Le Bourhis ◽  
T. Chauveau ◽  
O. Castelnau ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Strain Analysis ◽  
Direct Determination ◽  
Fiber Texture ◽  
Elastic Response ◽  
Diffraction Measurement ◽  
X Ray ◽  
Anisotropic Elastic

The anisotropic elastic response of supported thin films with a {111} fiber texture has been studied using anin-situmicro-tensile tester and X-ray diffractometry. It is shown which specific X-ray diffraction measurement geometries can be used to analyze the elastic strains in thin films without requiring any assumptions regarding elastic interactions between grains. It is evidenced (theoretically and experimentally) that the combination of two specific geometries leads to a simple linear relationship between the measured strains and the geometrical variable sin2ψ, avoiding the transition scale models. The linear fit of the experimental data allows a direct determination of the relationship between the three single-crystal elastic compliances or a direct determination of theS44single-crystal elastic compliance and the combination ofS11+ 2S12if the macroscopic stress is known. This methodology has been applied to a model system,i.e.gold film for which no size effect is expected, deposited on polyimide substrate, and it was found thatS44= 23.2 TPa−1andS11+ 2S12= 1.9 TPa−1, in good accordance with values for large crystals of gold.

Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB29 ◽  
Author(s):  
Yongzhao Yao ◽  
Yoshihiro Sugawara ◽  
Yukari Ishikawa ◽  
Narihito Okada ◽  
Kazuyuki Tadatomo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Single Crystal Substrate ◽  
X Ray ◽  
Crystal Substrate
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