Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors

2008 ◽  
Vol 103 (7) ◽  
pp. 07D119 ◽  
Author(s):  
Taehee Yoo ◽  
Dongyun Shin ◽  
Jungtaek Kim ◽  
Hyungchan Kim ◽  
Sanghoon Lee ◽  
...  
Nanoscale ◽  
2018 ◽  
Vol 10 (21) ◽  
pp. 10123-10129 ◽  
Author(s):  
Junli Zhang ◽  
Shimeng Zhu ◽  
Hongli Li ◽  
Liu Zhu ◽  
Yang Hu ◽  
...  

Direct observation of dynamical magnetization reversal process in a NiFe2O4 nanowire reveals the domination of shape anisotropy on its magnetic behavior.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Łukasz Frąckowiak ◽  
Feliks Stobiecki ◽  
Gabriel David Chaves-O’Flynn ◽  
Maciej Urbaniak ◽  
Marek Schmidt ◽  
...  

AbstractRecent results showed that the ferrimagnetic compensation point and other characteristic features of Tb/Co ferrimagnetic multilayers can be tailored by He+ ion bombardment. With appropriate choices of the He+ ion dose, we prepared two types of lattices composed of squares with either Tb or Co domination. The magnetization reversal of the first lattice is similar to that seen in ferromagnetic heterostructures consisting of areas with different switching fields. However, in the second lattice, the creation of domains without accompanying domain walls is possible. These domain patterns are particularly stable because they simultaneously lower the demagnetizing energy and the energy associated with the presence of domain walls (exchange and anisotropy). For both lattices, studies of magnetization reversal show that this process takes place by the propagation of the domain walls. If they are not present at the onset, the reversal starts from the nucleation of reversed domains and it is followed by domain wall propagation. The magnetization reversal process does not depend significantly on the relative sign of the effective magnetization in areas separated by domain walls.


2004 ◽  
Vol 272-276 ◽  
pp. E1185-E1187
Author(s):  
L Del Bianco ◽  
D Fiorani ◽  
A.M Testa ◽  
E Bonetti ◽  
L Pasquini

2006 ◽  
Vol 515 (2) ◽  
pp. 727-730 ◽  
Author(s):  
F. Carace ◽  
P. Vavassori ◽  
G. Gubbiotti ◽  
S. Tacchi ◽  
M. Madami ◽  
...  

2015 ◽  
Vol 32 (6) ◽  
pp. 067502
Author(s):  
Yi Li ◽  
Ben Xu ◽  
Shen-Yang Hu ◽  
Yu-Lan Li ◽  
Qiu-Lin Li ◽  
...  

2020 ◽  
Vol 512 ◽  
pp. 167045
Author(s):  
Guidobeth Sáez ◽  
Eduardo Cisternas ◽  
Pablo Díaz ◽  
Eugenio E. Vogel ◽  
Juan Pablo Burr ◽  
...  

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