Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy

2008 ◽  
Vol 92 (16) ◽  
pp. 162103 ◽  
Author(s):  
J. Y. Chen ◽  
G. C. Chi ◽  
P. J. Huang ◽  
M. Y. Chen ◽  
S. C. Hung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer

scholarly journals Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100)

2019 ◽  
Vol 45 (11) ◽  
pp. 3
Author(s):  
В.Н. Бессолов ◽  
М.Е. Компан ◽  
Е.В. Коненкова ◽  
В.Н. Пантелеев ◽  
С.Н. Родин ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer ◽  
Semipolar Gan ◽  
Nanostructured Si

AbstractTwo different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$\bar {1}$$ 1) on a V -shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10 $$\bar {1}$$ 1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ω_θ ~ 45 arcmin, whereas for the semipolar GaN(10 $$\bar {1}$$ 1), these values are –0.29 GPa and ω_θ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy

2006 ◽  
Vol 100 (3) ◽  
pp. 033508 ◽  
Author(s):  
A. Michon ◽  
I. Sagnes ◽  
G. Patriarche ◽  
G. Beaudoin ◽  
M. N. Mérat-Combes ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Vapor Phase ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Layer Growth Rate ◽  
Cap Layer ◽  
Metal Organic

Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots Grown by Metal-Organic Vapor Phase Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 507-510 ◽  
Author(s):  
Hong-Wen Ren ◽  
Mitsuru Sugisaki ◽  
Jeong-Sik Lee ◽  
Shigeo Sugou ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Self Assembled ◽  
Highly Uniform

scholarly journals N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications

2018 ◽  
Vol 11 (10) ◽  
pp. 101002 ◽  
Author(s):  
Jori Lemettinen ◽  
Hironori Okumura ◽  
Tomás Palacios ◽  
Sami Suihkonen
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer

Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy

2018 ◽  
Vol 52 (4) ◽  
pp. 497-501 ◽  
Author(s):  
D. V. Lebedev ◽  
N. A. Kalyuzhnyy ◽  
S. A. Mintairov ◽  
K. G. Belyaev ◽  
M. V. Rakhlin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Density Control ◽  
Metal Organic

scholarly journals Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

2006 ◽  
Vol 89 (7) ◽  
pp. 073115 ◽  
Author(s):  
S. Anantathanasarn ◽  
R. Nötzel ◽  
P. J. van Veldhoven ◽  
F. W. M. van Otten ◽  
Y. Barbarin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Wavelength Tunable ◽  
Metal Organic

Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3μm

2002 ◽  
Vol 235 (1-4) ◽  
pp. 89-94 ◽  
Author(s):  
G Saint-Girons ◽  
G Patriarche ◽  
L Largeau ◽  
J Coelho ◽  
A Mereuta ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic
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