Dopant Activation and Defect Analysis of Ultra-Shallow Junctions Made by Gas Cluster Ion Beams
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2013 ◽
Vol 315
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pp. 300-303
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2008 ◽
Vol 255
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pp. 831-833
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Vol 116
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pp. 23735-23741
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2006 ◽
Vol 252
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pp. 6517-6520
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