External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot

2009 ◽  
Vol 105 (5) ◽  
pp. 053710 ◽  
Author(s):  
Liming Jiang ◽  
Hailong Wang ◽  
Huiting Wu ◽  
Qian Gong ◽  
Songlin Feng
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
External Electric Field ◽  
Field Effect ◽  
Electric Field Effect ◽  
Donor Impurity ◽  
Zinc Blende ◽  
Hydrogenic Donor Impurity ◽  
Hydrogenic Donor ◽  
External Electric Field Effect

External electric field effect on the binding energy of a hydrogenic donor impurity in InGaAsP/InP concentric double quantum rings

2018 ◽  
Vol 32 (11) ◽  
pp. 1850138 ◽  
Author(s):  
Min Hu ◽  
Hailong Wang ◽  
Qian Gong ◽  
Shumin Wang
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
External Electric Field ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Donor Impurity ◽  
Quantum Rings ◽  
Hydrogenic Donor Impurity ◽  
Hydrogenic Donor ◽  
Peak Value

Within the framework of effective-mass envelope-function theory, the ground state binding energy of a hydrogenic donor impurity is calculated in the InGaAsP/InP concentric double quantum rings (CDQRs) using the plane wave method. The effects of geometry, impurity position, external electric field and alloy composition on binding energy are considered. It is shown that the peak value of the binding energy appears in two rings with large gap as the donor impurity moves along the radial direction. The binding energy reaches the peak value at the center of ring height when the donor impurity moves along the axial direction. The binding energy shows nonlinear variation with the increase of ring height. With the external electric field applied along the z-axis, the binding energy of the donor impurity located at z[Formula: see text] decreases while that located at z[Formula: see text] increases. In addition, the binding energy decreases with increasing Ga composition, but increases with the increasing As composition.

EXTERNAL ELECTRIC FIELD EFFECT ON THE HYDROGENIC DONOR IMPURITY IN ZINC-BLENDE GaN/AlGaN CYLINDRICAL QUANTUM WELL WIRE

2010 ◽  
Vol 24 (23) ◽  
pp. 2413-2421 ◽  
Author(s):  
LIMING JIANG ◽  
JIANMENG SUN
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
External Electric Field ◽  
Stark Shift ◽  
Donor Impurity ◽  
Zinc Blende ◽  
Hydrogenic Donor Impurity ◽  
Donor Binding Energy ◽  
Quantum Well Wire ◽  
Hydrogenic Donor

The binding energy of a hydrogenic donor impurity in a zinc-blende GaN / AlGaN cylindrical quantum well wire (QWW) is calculated in the framework of effective-mass envelope-function theory using the plane wave basis. It is shown that the donor binding energy is highly dependent on the impurity position, the radius of the wire and the external electric field. In addition, Stark shift dependence on the radius of the QWW and the external electric field is also calculated. The donor binding energy has a maximum when the impurity is located at the center of the QWW. The donor binding energy decreases with the increase of the external electric field, but stark shift increases with the increase of the external electric field or the radius of the QWW.

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