EXTERNAL ELECTRIC FIELD EFFECT ON THE HYDROGENIC DONOR IMPURITY IN ZINC-BLENDE GaN/AlGaN CYLINDRICAL QUANTUM WELL WIRE

2010 ◽  
Vol 24 (23) ◽  
pp. 2413-2421 ◽  
Author(s):  
LIMING JIANG ◽  
JIANMENG SUN
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
External Electric Field ◽  
Stark Shift ◽  
Donor Impurity ◽  
Zinc Blende ◽  
Hydrogenic Donor Impurity ◽  
Donor Binding Energy ◽  
Quantum Well Wire ◽  
Hydrogenic Donor

The binding energy of a hydrogenic donor impurity in a zinc-blende GaN / AlGaN cylindrical quantum well wire (QWW) is calculated in the framework of effective-mass envelope-function theory using the plane wave basis. It is shown that the donor binding energy is highly dependent on the impurity position, the radius of the wire and the external electric field. In addition, Stark shift dependence on the radius of the QWW and the external electric field is also calculated. The donor binding energy has a maximum when the impurity is located at the center of the QWW. The donor binding energy decreases with the increase of the external electric field, but stark shift increases with the increase of the external electric field or the radius of the QWW.

External electric field effect on the binding energy of a hydrogenic donor impurity in InGaAsP/InP concentric double quantum rings

2018 ◽  
Vol 32 (11) ◽  
pp. 1850138 ◽  
Author(s):  
Min Hu ◽  
Hailong Wang ◽  
Qian Gong ◽  
Shumin Wang
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
External Electric Field ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Donor Impurity ◽  
Quantum Rings ◽  
Hydrogenic Donor Impurity ◽  
Hydrogenic Donor ◽  
Peak Value

Within the framework of effective-mass envelope-function theory, the ground state binding energy of a hydrogenic donor impurity is calculated in the InGaAsP/InP concentric double quantum rings (CDQRs) using the plane wave method. The effects of geometry, impurity position, external electric field and alloy composition on binding energy are considered. It is shown that the peak value of the binding energy appears in two rings with large gap as the donor impurity moves along the radial direction. The binding energy reaches the peak value at the center of ring height when the donor impurity moves along the axial direction. The binding energy shows nonlinear variation with the increase of ring height. With the external electric field applied along the z-axis, the binding energy of the donor impurity located at z[Formula: see text] decreases while that located at z[Formula: see text] increases. In addition, the binding energy decreases with increasing Ga composition, but increases with the increasing As composition.

scholarly journals Hydrogenic-Donor Impurity Binding Energy Dependence of the Electric Field in GaAs/AlxGa1−xAs Quantum Rings

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Guangxin Wang ◽  
Xiuzhi Duan ◽  
Wei Chen
Keyword(s):  
Wave Function ◽  
Binding Energy ◽  
Electric Field ◽  
Applied Electric Field ◽  
Donor Impurity ◽  
Electronic Wave ◽  
Hydrogenic Donor Impurity ◽  
Hydrogenic Donor ◽  
Electronic Wave Function ◽  
Radial Thickness

Using a variational method with two-parameter trial wave function and the effective mass approximation, the binding energy of a donor impurity in GaAs/AlxGa1−xAs cylindrical quantum ring (QR) subjected to an external field is calculated. It is shown that the donor impurity binding energy is highly dependent on the QR structure parameters (radial thickness and height), impurity position, and external electric field. The binding energy increases inchmeal as the QR parameters (radial thickness and height) decrease until a maximum value for a central impurity and then begins to drop quickly. The applied electric field can significantly modify the spread of electronic wave function in the QR and shift electronic wave function from the donor position and then leads to binding energy changes. In addition, results for the binding energies of a hydrogenic donor impurity as functions of the impurity position and applied electric field are also presented.

scholarly journals External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots

2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Guang-Xin Wang ◽  
Li-Li Zhang ◽  
Huan Wei
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Electric Field ◽  
External Electric Field ◽  
Coupled Quantum Dots ◽  
Impurity Position ◽  
Zinc Blende ◽  
Maximum Value ◽  
Donor Binding Energy ◽  
Impurity Ion

Based on the effective-mass approximation and variational procedure, the ground-state donor binding energy in a cylindrical zinc-blende InxGa1-xN/GaN symmetric coupled quantum dots (SCQDs) is investigated in the presence of the external electric field. Numerical results show that the donor binding energy increases firstly until a maximum value, and then it begins to drop quickly in all the cases with decreasing the dot radius. As the thickness of left dot and right dot decreases, the donor binding energy increases monotonically at first, reaches a maximum value, and then drops rapidly for an impurity ion located at the right dot center and the middle barrier center. Moreover, the donor binding energy for an impurity ion located at the center of the left dot is insensitive to the variation of dot thickness for large dot thickness due to the Stark effect. Meanwhile, the impurity position plays an important role on the change of the donor binding energy under the external electric field. In particular, the impurity position corresponding to the peak value of the donor binding energy is shifted toward the left QD with increasing the external electric field strength.

scholarly journals Polaronic Effects of a Hydrogenic Donor Impurity in Low Dimensional Semiconductor Systems

2009 ◽  
Vol 1 (3) ◽  
pp. 422-429 ◽  
Author(s):  
A. J. Peter ◽  
N. Radhakrishnan
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Quantum Well ◽  
Longitudinal Optical ◽  
Wire Radius ◽  
Donor Impurity ◽  
Donor Binding Energy ◽  
Quantum Well Wire ◽  
Hydrogenic Donor ◽  
Low Dimensional

The ground state of a polaron bound to hydrogen like donor impurity is investigated by considering the effect of bulk Longitudinal-Optical (LO) phonon. Donor binding energy of a hydrogenic donor, with the inclusion of electron-phonon interaction is computed for the low-dimensional semiconducting systems like quantum well, quantum well wire and quantum dot taking GaAs/AlxGa1-xAs systems as an example. Calculations are performed using a variational approach within the single band effective mass approximation. The results show that the polaronic effect is more pronounced for the lowest confinement. The polaronic effect enhances the donor binding energy but it diminishes when the well width, wire radius and dot radius become larger. Also the numerical calculations reveal that the influences of phonons on donor are considerable and should not be neglected especially for narrow dimensions in all the three confinements.Keywords: Donor binding energy; Polaronic effect; Quantum dot; Quantum wire; Quantum well.© 2009 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.DOI: 10.3329/jsr.v1i3.2529            J. Sci. Res. 1 (3), 422- 429 (2009)

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