Photoluminescence and positron annihilation spectroscopy of MeV Si+ ion-irradiated SiyO1−y:Er (y≈1/3) thin films

2009 ◽  
Vol 105 (5) ◽  
pp. 053517
Author(s):  
D. E. Blakie ◽  
O. H. Y. Zalloum ◽  
J. Wojcik ◽  
E. A. Irving ◽  
A. P. Knights ◽  
...  
2020 ◽  
Vol 137 (2) ◽  
pp. 205-208 ◽  
Author(s):  
S.W.H. Eijt ◽  
T.W.H. de Krom ◽  
D. Chaykina ◽  
H. Schut ◽  
G. Colombi ◽  
...  

1997 ◽  
Vol 81 (5) ◽  
pp. 2451-2453 ◽  
Author(s):  
F. L. Freire ◽  
D. F. Franceschini ◽  
R. S. Brusa ◽  
G. R. Karwasz ◽  
G. Mariotto ◽  
...  

2017 ◽  
Vol 26 (5) ◽  
pp. 057802 ◽  
Author(s):  
Peng Kuang ◽  
Xiao-Long Han ◽  
Xing-Zhong Cao ◽  
Rui Xia ◽  
Peng Zhang ◽  
...  

Author(s):  
Ilja Makkonen ◽  
Antti Karjalainen ◽  
Vera Prozheeva ◽  
Gunter Wagner ◽  
Michele Baldini ◽  
...  

2002 ◽  
Vol 751 ◽  
Author(s):  
Kenji Ito ◽  
Yoshinori Kobayashi ◽  
Runsheng Yu ◽  
Kouichi Hirata ◽  
Hisashi Togashi ◽  
...  

ABSTRACTApplication of porous silicon oxide thin films to nanotechnology is under intensive investigation. Introducing a large amount of nano pores into a silicon oxide matrix is important to develop low-k dielectrics for future ultra-large-scale integrated circuits (ULSI). In this work, we applied variable-energy positron annihilation to the characterization of porous silicon oxide thin films fabricated on silicon wafers by sputtering and spincoating. It was found that the sputtered film has higher open pore connectivity than that of the spincoated low-k film.


2020 ◽  
Vol 127 (8) ◽  
pp. 085304 ◽  
Author(s):  
A. Montes ◽  
S. W. H. Eijt ◽  
Y. Tian ◽  
R. Gram ◽  
H. Schut ◽  
...  

2007 ◽  
Vol 4 (10) ◽  
pp. 3550-3553 ◽  
Author(s):  
Masataka Mizuno ◽  
Teruo Kihara ◽  
Hideki Araki ◽  
Yasuharu Shirai ◽  
Takashi Onishi

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