Output power enhancement of GaN light emitting diodes with p-type ZnO hole injection layer

2009 ◽  
Vol 94 (10) ◽  
pp. 103506 ◽  
Author(s):  
B. J. Kim ◽  
Y. R. Ryu ◽  
T. S. Lee ◽  
H. W. White
2019 ◽  
Vol 216 (11) ◽  
pp. 1900004 ◽  
Author(s):  
Hyeong‐Jin Seo ◽  
Ji‐Eun Lee ◽  
Su Been Heo ◽  
Minju Kim ◽  
Yeonjin Yi ◽  
...  

2009 ◽  
Vol 517 (17) ◽  
pp. 5293-5297 ◽  
Author(s):  
Shui-Hsiang Su ◽  
Cheng-Chieh Hou ◽  
Jin-Shian Tsai ◽  
Meiso Yokoyama

2012 ◽  
Vol 13 (5) ◽  
pp. 796-806 ◽  
Author(s):  
Maria Vasilopoulou ◽  
George Papadimitropoulos ◽  
Leonidas C. Palilis ◽  
Dimitra G. Georgiadou ◽  
Panagiotis Argitis ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13584-13589 ◽  
Author(s):  
Meiling Shan ◽  
Haipeng Jiang ◽  
Yu Guan ◽  
Dongsu Sun ◽  
Yu Wang ◽  
...  

We have demonstrated organic light-emitting diodes (OLEDs) by incorporating copper iodide (CuI) in 4,4′,4′′-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA) as a hole injection layer (HIL) based on the emitting system of C545T–Alq3.


2021 ◽  
Author(s):  
Shuo Sun ◽  
Junjie Si ◽  
Zugang Liu ◽  
Rui Xu ◽  
Yihang Du ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.


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