scholarly journals Enhancement of emission from CdSe quantum dots induced by propagating surface plasmon polaritons

2009 ◽  
Vol 94 (17) ◽  
pp. 173506 ◽  
Author(s):  
T. J. Lin ◽  
W. J. Chuang ◽  
Soofin Cheng ◽  
Y. F. Chen
2016 ◽  
Vol 7 (22) ◽  
pp. 4648-4654 ◽  
Author(s):  
Hai Wang ◽  
Hai-Yu Wang ◽  
Andrea Toma ◽  
Taka-aki Yano ◽  
Qi-Dai Chen ◽  
...  

2019 ◽  
Vol 126 (1) ◽  
pp. 78
Author(s):  
М.Ю. Губин ◽  
М.Г. Гладуш ◽  
А.В. Прохоров

AbstractWe discuss particular features of generation of surface plasmon polaritons in a metal–dielectric planar interface that is coupled to semiconductor quantum dots by near-field interactions. As a model of working medium for performing numerical experiment, we use a gold metal surface onto which a polyethylene terephthalate film containing CdSe semiconductor spherical quantum dot is deposited. The problem of optimizing the radius of a quantum dot and its distance to a metal surface is solved for achieving the maximum transfer efficiency of the quantum dot energy for the generation of surface plasmon polaritons. Dispersion effects of the surface wave generation rate associated with deviations of the radius of quantum dots and their distance to the metal surface from the corresponding average values are taken into account.


2020 ◽  
Vol 14 (12) ◽  
pp. 2000237
Author(s):  
Mikhail Yu. Gubin ◽  
Alexander V. Shesterikov ◽  
Alexei V. Prokhorov ◽  
Valentyn S. Volkov

2019 ◽  
Vol 220 ◽  
pp. 02010 ◽  
Author(s):  
Alexei Prokhorov ◽  
Valentyn Volkov

The effects of quantum coherence arising in an ensemble of semiconductor quantum dots located near the surface of two-dimensional optical materials are considered. The conditions for the realization of strong coupling between surface plasmon-polaritons and quantum dot in proximity to graphene are studied.


Author(s):  
Н.В. Байдусь ◽  
В.А. Кукушкин ◽  
С.М. Некоркин ◽  
А.В. Круглов ◽  
Д.Г. Реунов

AbstractThe properties of InGaAs/GaAs quantum dots (QDs) grown by MOS-hydride migration-stimulated epitaxy at a reduced pressure using submonolayer deposition are investigated. The wavelength of their photoluminescence at 300 K is in the range of 1.28–1.31 μm and can be controlled by varying the growth temperature and the number of QD-deposition cycles. The highest QD surface density is 3 × 10^10 cm^–2. Structures with 1–3 QD layers and spacer layers 5–12 nm thick between them are grown. The spacer layers (as well as the cap layers) are selectively doped with carbon (acceptor). It is established that the QD photoluminescence is characterized by an enhanced degree of polarization in the direction orthogonal to the structure plane. This should favor their use for the excitation of surface plasmon–polaritons in Schottky light-emitting diodes.


2012 ◽  
Author(s):  
A. I. Väkeväinen ◽  
R. J. Moerland ◽  
A.-P. Eskelinen ◽  
H. T. Rekola ◽  
G. Sharma ◽  
...  

2010 ◽  
Vol 18 (18) ◽  
pp. 18633 ◽  
Author(s):  
Ilya Radko ◽  
Michael G. Nielsen ◽  
Ole Albrektsen ◽  
Sergey I. Bozhevolnyi

2014 ◽  
Vol 104 (25) ◽  
pp. 251103 ◽  
Author(s):  
Danhong Huang ◽  
Michelle Easter ◽  
Godfrey Gumbs ◽  
A. A. Maradudin ◽  
Shawn-Yu Lin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document