Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy

2009 ◽  
Vol 94 (26) ◽  
pp. 262503 ◽  
Author(s):  
M. Kitamura ◽  
I. Ohkubo ◽  
M. Matsunami ◽  
K. Horiba ◽  
H. Kumigashira ◽  
...  
2015 ◽  
Vol 39 (5) ◽  
pp. 186-190
Author(s):  
Yusuke Hotta ◽  
Takato Yanagawa ◽  
Makoto Yamada ◽  
Mitsuru Ohtake ◽  
Masaaki Futamoto ◽  
...  

2009 ◽  
Vol 105 (7) ◽  
pp. 07C315 ◽  
Author(s):  
Mitsuru Ohtake ◽  
Yuri Nukaga ◽  
Fumiyoshi Kirino ◽  
Masaaki Futamoto

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.


2011 ◽  
Vol 50 (6) ◽  
pp. 063001 ◽  
Author(s):  
Jumpei Higuchi ◽  
Mitsuru Ohtake ◽  
Yoichi Sato ◽  
Tsutomu Nishiyama ◽  
Masaaki Futamoto

2002 ◽  
Vol 422 (1-2) ◽  
pp. 73-79 ◽  
Author(s):  
Kenichi Tsukada ◽  
Tsutomu Nagahama ◽  
Mitsugu Sohma ◽  
Iwao Yamaguchi ◽  
Takaaki Manabe ◽  
...  

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