Analysis of the high‐field domain dynamics in a planar Gunn diode by using a stroboscopic SEM

A source of frequency-modulation (FM) noise in a free-running Gunn diode, due to fluctuations in valley population in the accumulation layer, is investigated using the results of recent Monte-Carlo high-field transport studies.

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Waveform stability of a traveling high-field domain in a Gunn diode

Journal of Mathematical Analysis and Applications ◽

10.1016/0022-247x(78)90204-4 ◽

1978 ◽

Vol 65 (1) ◽

pp. 85-109 ◽

Cited By ~ 1

Author(s):

Kenjiro Maginu

Keyword(s):

High Field ◽

Gunn Diode

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Electro−optic modulation of a laser beam by a traveling high−field domain in a GaAs Gunn diode

Journal of Applied Physics ◽

10.1063/1.321699 ◽

1975 ◽

Vol 46 (3) ◽

pp. 1318-1321 ◽

Cited By ~ 2

Author(s):

Kimihiro Ohta ◽

Mitsuo Kawashima ◽

Shoei Kataoka

Keyword(s):

Laser Beam ◽

High Field ◽

Gunn Diode ◽

Electro Optic

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An Algorithm to Develop Lumped Model for Gunn-Diode Dynamics

Active and Passive Electronic Components ◽

10.1155/1998/79639 ◽

1998 ◽

Vol 21 (1) ◽

pp. 17-21

Author(s):

Umesh Kumar

Keyword(s):

Drift Velocity ◽

Nonlinear Diffusion ◽

High Field ◽

Gunn Diode ◽

Lumped Model ◽

Gunn Diodes ◽

Diffusion Effects

A nonlinear lumped model can be developed for Gunn-Diodes to describe the diffusion effects as the domain travels from cathode to anode of a Gunn-Diode. The model describes the domain extinction and nucleation phenomena. It allows the user to specify arbitrary nonlinear drift velocity V(E) and nonlinear diffusion D(E).The model simulates arbitrary Gunn-Diode circuits operating in any matured high field domain or in the LSA mode.Here we have constructed an algorithm to lead to development of this model

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Relation between the domain dynamics and the shape of the cathode “notch” in a Gunn diode

Technical Physics Letters ◽

10.1134/1.1262284 ◽

1998 ◽

Vol 24 (11) ◽

pp. 836-838 ◽

Cited By ~ 4

Author(s):

A. I. Mikhailov ◽

D. M. Lerner

Keyword(s):

Gunn Diode ◽

Domain Dynamics

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Study of segregation in La1.8Sr0.2CuO4 superconductor by STEM-EDS microanalysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100125294 ◽

1987 ◽

Vol 45 ◽

pp. 54-55

Author(s):

T. F. Kelly ◽

P. J. Lee ◽

E. E. Hellstrom ◽

D. C. Larbalestier

Keyword(s):

Rare Earth ◽

High Field ◽

Transport Current ◽

Total Thickness ◽

New Class ◽

Ceramic Superconductors ◽

Current Densities ◽

Group Ii ◽

Eds Microanalysis

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.

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