scholarly journals Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

2009 ◽  
Vol 95 (26) ◽  
pp. 262113 ◽  
Author(s):  
Seunghyup Lee ◽  
Heejin Kim ◽  
Dong-Jin Yun ◽  
Shi-Woo Rhee ◽  
Kijung Yong
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

2019 ◽  
Vol 41 (3) ◽  
pp. 475-482 ◽  
Author(s):  
Yu-Ting Tsai ◽  
Ting-Chang Chang ◽  
Chao-Cheng Lin ◽  
Lan-Shin Chiang ◽  
Shih-Cheng Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices

2013 ◽  
Vol 53 (29) ◽  
pp. 1-7
Author(s):  
M.-C. Chen ◽  
T.-C. Chang ◽  
Y.-C. Chiu ◽  
S.-C. Chen ◽  
S.-Y. Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics
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