Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface
Keyword(s):
Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.
2011 ◽
Vol 21
(38)
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pp. 14516
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2010 ◽
Vol 13
(5)
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pp. H141
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Keyword(s):
Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors
2010 ◽
Vol 13
(4)
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pp. H101
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Keyword(s):
2010 ◽
Vol 13
(8)
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pp. H264
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2011 ◽
Vol 26
(3)
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pp. 034007
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