scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices

2011 ◽  
Vol 4 (5) ◽  
pp. 054204 ◽  
Author(s):  
Ying-Chih Chen ◽  
Yan-Kuin Su ◽  
Chun-Yuan Huang ◽  
Hsin-Chieh Yu ◽  
Chiao-Yang Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Hydroxyethyl Methacrylate ◽  
Switching Characteristics

Investigation on resistive switching characteristics of ZnO thin film

2014 ◽  
Author(s):  
Min Wei ◽  
Fan Yang ◽  
Chunfu Li ◽  
Hong Deng ◽  
Guangjun Wen
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Zno Thin Film ◽  
Switching Characteristics

Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film

2018 ◽  
Vol 145 ◽  
pp. 46-48 ◽  
Author(s):  
Dandan Liang ◽  
Xiaoping Li ◽  
Junshuai Wang ◽  
Liangchen Wu ◽  
Peng Chen
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Zno Thin Film ◽  
Switching Characteristics

Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film

2014 ◽  
Vol 543-547 ◽  
pp. 3839-3842 ◽  
Author(s):  
Chun Yang Huang ◽  
Umesh Chand ◽  
Tseung Yuen Tseng
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Retention Test ◽  
Oxygen Vacancies ◽  
Negative Voltage ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Due to the electrical and physical analyses, the robust negative voltage unipolar resistive switching behaviors in Ti/ZrO2/Ti/ZrO2/Pt device have been investigated. The Ti diffusion in ZrO2 film can generate more amounts of oxygen vacancies in it, which leads the lower value and narrower variation in forming voltage. Moreover, the good performances with more than 1000 switching cycles and long retention test can be achieved in the present device.

Characteristics of ZnO Thin Film for the Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koseng Su Lim
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Zno Thin Film ◽  
Electrical Field ◽  
High Electrical Field ◽  
Oxygen Conditions ◽  
Switching Characteristics

AbstractWe report resistive switching characteristics in Pt/ZnO/Pt devices where ZnO thin film is fabricated at various oxygen conditions. With the increase of oxygen contents in ZnO thin film, the forming voltage is gradually increased while reset and set voltages are almost unchanged. We also investigated the effect of top electrodes on resistive switching of top electrode/ZnO/Pt device. For a Pt/ZnO/Pt device, it exhibits the excellent resistive switching behavior due to high electrical field of the well-defined Schottky barrier. For Al/ZnO/Pt device, little resistive switching phenomena were occurred due to leakage current of the weak Schottky (or Ohmic) contact.

Sign in / Sign up

Export Citation Format

Share Document