Comparison of high‐field stress effects in metal‐oxide‐semiconductor structures with aluminum and polycrystalline silicon gates using internal photoemission measurements

M. M. Heyns; R. F. De Keersmaecker

doi:10.1063/1.335567

Comparison of high‐field stress effects in metal‐oxide‐semiconductor structures with aluminum and polycrystalline silicon gates using internal photoemission measurements

Journal of Applied Physics ◽

10.1063/1.335567 ◽

1985 ◽

Vol 58 (10) ◽

pp. 3936-3939 ◽

Cited By ~ 22

Author(s):

M. M. Heyns ◽

R. F. De Keersmaecker

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Internal Photoemission ◽

Field Stress ◽

Stress Effects ◽

Semiconductor Structures

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A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1826213 ◽

2005 ◽

Vol 97 (1) ◽

pp. 014503 ◽

Cited By ~ 9

Author(s):

Mun-Soo Park ◽

Inmook Na ◽

Chu R. Wie

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Power ◽

Field Stress ◽

Stress Effects

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Threshold energies of high‐field‐induced hole currents and positive charges in SiO2layers of metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.358479 ◽

1994 ◽

Vol 76 (10) ◽

pp. 5795-5799 ◽

Cited By ~ 13

Author(s):

Xiaoping Gao ◽

Sinclair S. Yee

Keyword(s):

Metal Oxide ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Threshold Energies

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Trap generation and electron detrapping in SiO2during high‐field stressing of metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.94709 ◽

1984 ◽

Vol 44 (2) ◽

pp. 202-204 ◽

Cited By ~ 41

Author(s):

M. M. Heyns ◽

R. F. DeKeersmaecker ◽

M. W. Hillen

Keyword(s):

Metal Oxide ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Oxide current relaxation spectroscopy in tunneling metal‐oxide‐semiconductor structures under high field stresses

Journal of Applied Physics ◽

10.1063/1.345086 ◽

1990 ◽

Vol 67 (11) ◽

pp. 6924-6929 ◽

Cited By ~ 10

Author(s):

Mingzhen Xu ◽

Changhua Tan ◽

Yangyuan Wang

Keyword(s):

Metal Oxide ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Current Relaxation

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Breakdown field strengths of anodically and thermally grown metal/oxide/semiconductor structures on polycrystalline silicon

Thin Solid Films ◽

10.1016/0040-6090(86)90299-3 ◽

1986 ◽

Vol 142 (1) ◽

pp. 21-25 ◽

Cited By ~ 6

Author(s):

G. Mende ◽

J. Wende

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Breakdown Field ◽

Semiconductor Structures ◽

Field Strengths ◽

Thermally Grown

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Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.2590 ◽

1996 ◽

Vol 35 (Part 1, No. 5A) ◽

pp. 2590-2594 ◽

Cited By ~ 10

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Kan-Yuan Lee ◽

Jang-Cheng Hsieh ◽

Mong-Song Liang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Stress ◽

Effect Transistor

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Anomalous capacitance‐voltage characteristics of BF2‐implanted and rapid thermal annealedp+‐polycrystalline silicon gate metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.103819 ◽

1990 ◽

Vol 57 (24) ◽

pp. 2573-2575 ◽

Cited By ~ 9

Author(s):

G. Q. Lo ◽

D. L. Kwong ◽

S. Lee

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Degradation of oxides in metal‐oxide‐semiconductor capacitors under high‐field stress

Journal of Applied Physics ◽

10.1063/1.354378 ◽

1993 ◽

Vol 74 (7) ◽

pp. 4598-4607 ◽

Cited By ~ 6

Author(s):

R. M. Patrikar ◽

R. Lal ◽

J. Vasi

Keyword(s):

Metal Oxide ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Stress

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Impedance‐frequency characteristics of metal‐oxide‐semiconductor structures on polycrystalline silicon

Journal of Applied Physics ◽

10.1063/1.340036 ◽

1988 ◽

Vol 63 (3) ◽

pp. 934-937 ◽

Cited By ~ 1

Author(s):

M. V. S. Lakshmi ◽

K. Ramkumar

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Metal Oxide Semiconductor ◽

Frequency Characteristics ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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