A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

Mun-Soo Park; Inmook Na; Chu R. Wie

doi:10.1063/1.1826213

A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1826213 ◽

2005 ◽

Vol 97 (1) ◽

pp. 014503 ◽

Cited By ~ 9

Author(s):

Mun-Soo Park ◽

Inmook Na ◽

Chu R. Wie

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Power ◽

Field Stress ◽

Stress Effects

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Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2807832 ◽

2007 ◽

Vol 91 (20) ◽

pp. 203506 ◽

Cited By ~ 4

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Yukio Nakabayashi ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility ◽

Stress Effects ◽

P Type

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Comparison of high‐field stress effects in metal‐oxide‐semiconductor structures with aluminum and polycrystalline silicon gates using internal photoemission measurements

Journal of Applied Physics ◽

10.1063/1.335567 ◽

1985 ◽

Vol 58 (10) ◽

pp. 3936-3939 ◽

Cited By ~ 22

Author(s):

M. M. Heyns ◽

R. F. De Keersmaecker

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Internal Photoemission ◽

Field Stress ◽

Stress Effects ◽

Semiconductor Structures

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Lateral Nonuniformity Effects of Border Traps on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors Subjected to High-Field Stresses

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.922489 ◽

2008 ◽

Vol 55 (6) ◽

pp. 1366-1372 ◽

Cited By ~ 8

Author(s):

Jen-Chou Tseng ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Optimization of Dislocation Edge Stress Effects for Si N-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc20 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC20

Author(s):

Ming-Han Liao ◽

Ci-Hua Chen ◽

Li-Chen Chang ◽

Chen Yang ◽

Ming-Yuan Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Effects ◽

Edge Stress

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OS20-3-1 Evaluation of uniaxial-stress effects on DC characteristics of n-type metal-oxide-semiconductor field-effect transistors

The Abstracts of ATEM International Conference on Advanced Technology in Experimental Mechanics Asian Conference on Experimental Mechanics ◽

10.1299/jsmeatem.2011.10._os20-3-1- ◽

2011 ◽

Vol 2011.10 (0) ◽

pp. _OS20-3-1-

Author(s):

Masaaki Koganemaru ◽

Keisuke Yoshida ◽

Naohiro Tada ◽

Toru Ikeda ◽

Noriyuki Miyazaki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Effects ◽

Dc Characteristics

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Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.2590 ◽

1996 ◽

Vol 35 (Part 1, No. 5A) ◽

pp. 2590-2594 ◽

Cited By ~ 10

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Kan-Yuan Lee ◽

Jang-Cheng Hsieh ◽

Mong-Song Liang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Stress ◽

Effect Transistor

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Comparison between high-field piezoresistance coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress

Journal of Applied Physics ◽

10.1063/1.2936890 ◽

2008 ◽

Vol 103 (11) ◽

pp. 113704 ◽

Cited By ~ 30

Author(s):

Min Chu ◽

Toshikazu Nishida ◽

Xiaoliang Lv ◽

Nidhi Mohta ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Biaxial Stress ◽

Oxide Semiconductor

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Publisher’s Note: “Optimization of Dislocation Edge Stress Effects for Si N-Type Metal–Oxide–Semiconductor Field-Effect Transistors”

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.039205 ◽

2015 ◽

Vol 54 (3) ◽

pp. 039205

Author(s):

Ming-Han Liao ◽

Ci-Hua Chen ◽

Li-Chen Chang ◽

Chen Yang ◽

Ming-Yuan Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Effects ◽

Edge Stress

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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