Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric

Oxide Semiconductor ◽

Field Stress ◽

Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2014.6926183 ◽

2014 ◽

Cited By ~ 3

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

IEEE Electron Device Letters ◽

10.1109/led.2008.2001766 ◽

2008 ◽

Vol 29 (9) ◽

pp. 977-980 ◽

Cited By ~ 30

Author(s):

J. Q. Lin ◽

S. J. Lee ◽

H. J. Oh ◽

G. Q. Lo ◽

D. L. Kwong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Metal Gate ◽

Inversion Mode ◽

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

10.1063/1.3614446 ◽

2011 ◽

Vol 99 (3) ◽

pp. 033502 ◽

Cited By ~ 12

Author(s):

J. H. Yum ◽

T. Akyol ◽

M. Lei ◽

D. A. Ferrer ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

10.1063/1.2969282 ◽

2008 ◽

Vol 93 (5) ◽

pp. 053504 ◽

Cited By ~ 48

Author(s):

Y. C. Chang ◽

W. H. Chang ◽

H. C. Chiu ◽

L. T. Tung ◽

C. H. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Cited By ~ 4

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

10.1063/1.2931708 ◽

2008 ◽

Vol 92 (20) ◽

pp. 203505 ◽

Cited By ~ 27

Author(s):

D. Shahrjerdi ◽

T. Akyol ◽

M. Ramon ◽

D. I. Garcia-Gutierrez ◽

E. Tutuc ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor ◽

Al2o3 Gate Dielectric

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.77 ◽

2004 ◽

Vol 43 (1) ◽

pp. 77-81 ◽

Cited By ~ 3

Author(s):

Kunihiro Suzuki ◽

Tatsuya Usuki

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Velocity Model ◽

Oxide Semiconductor ◽

Model Based ◽

Effect Transistor ◽

Carrier Velocity

Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.124202 ◽

2010 ◽

Vol 49 (12) ◽

pp. 124202 ◽

Cited By ~ 6

Author(s):

Cong Li ◽

Yi-Qi Zhuang ◽

Ru Han

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Threshold Model ◽

Oxide Semiconductor ◽

Gate Stack ◽

Surrounding Gate ◽

Effect of anode material on high-field-induced hole current in SiO/sub 2/ layer of metal-oxide-semiconductor field-effect transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.324593 ◽

1994 ◽

Vol 41 (10) ◽

pp. 1819-1823 ◽

Cited By ~ 3

Author(s):

Xiaopinh Gao ◽

S.S. Yee

Keyword(s):

Metal Oxide ◽

Anode Material ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Hole Current