Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2907-2916 ◽  
Author(s):  
Shulong Lu ◽  
Shiro Uchida
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Molecular Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

The Influence of the Fullerene on the Optical Constants of the Photoactive Blend Film of a Polymer Solar Cell

2010 ◽  
Vol 74 ◽  
pp. 164-169 ◽  
Author(s):  
Pasquale Morvillo ◽  
Eugenia Bobeico ◽  
Salvatore Esposito
Keyword(s):  
Solar Cell ◽  
Optical Constants ◽  
Polymer Solar Cell ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Current Output ◽  
Blend Film

The short circuit current density (Jsc) of polymer solar cells is strictly related to the absorption of the blend film. Recently it has been shown that the use of [70]PCBM as electron acceptor can improve the current output of such devices because C70 derivatives have a stronger and broader absorption compared to C60 ones. The aim of this work is to study the influence of the fullerene on the optical behaviour of the photoactive blend film of a polymer solar cell. We have determined the optical constants of a P3HT:[70]PCBM blend film and studied their variation as a function of the annealing temperature. Afterward, we simulated the optical absorption of the active layer inside the device structure and calculated the maximum achievable Jsc with the aim to correlate the variation of the optical constants to the device output current. We compared this value with that one obtained using a P3HT:[60]PCBM blend.

Application of InN Based Quantum Dot in Reducing Short Circuit Current Variation of Solar Cell above Room Temperature

2013 ◽  
Vol 594-595 ◽  
pp. 3-7
Author(s):  
M.A. Rashid ◽  
F. Malek ◽  
A.N. Al-Khateeb ◽  
F.A. Rosli ◽  
M.A. Humayun ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Effect Of Temperature ◽  
Device Structure ◽  
Comparison Results ◽  
Current Variation

This paper focuses on the applicability of InN based quantum dot in the active layer of the solar cell to reduce the short circuit current variation above the room temperature. We have investigated numerically the effect of temperature on the short circuit current of the solar cell using InN based quantum dot in the active layer of the solar cell. The numerical results are compared with those obtained by using Ge based quantum dot. The comparison results revealed that the short circuit current has been increased slightly but the variation of short circuit current has been reduced significantly in the case of using InN quantum dot in the active layer of the device structure. As the results, InN can be considered as the best alternative material to fabricate solar cell with higher short circuit current in upcoming decades.

Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy

2015 ◽  
Vol 9 (1) ◽  
pp. 016501 ◽  
Author(s):  
Pan Dai ◽  
Shulong Lu ◽  
Shiro Uchida ◽  
Lian Ji ◽  
Yuanyuan Wu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Solid State ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Junction Solar Cell

High short-circuit current density in a non-toxic Bi2S3 Quantum dot sensitized solar cell

2021 ◽  
pp. 100783
Author(s):  
Christopher Rosiles-Perez ◽  
Sirak Sidhik ◽  
Luis Ixtilico-Cortés ◽  
Fernando Robles-Montes ◽  
Tzarara López-Luke ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals Over 30% efficiency bifacial 4-terminal perovskite-heterojunction silicon tandem solar cells with spectral albedo

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sangho Kim ◽  
Thanh Thuy Trinh ◽  
Jinjoo Park ◽  
Duy Phong Pham ◽  
Sunhwa Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Solar Spectrum ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Production Costs ◽  
White Sand ◽  
Reflected Light

AbstractWe developed and designed a bifacial four-terminal perovskite (PVK)/crystalline silicon (c-Si) heterojunction (HJ) tandem solar cell configuration albedo reflection in which the c-Si HJ bottom sub-cell absorbs the solar spectrum from both the front and rear sides (reflected light from the background such as green grass, white sand, red brick, roofing shingle, snow, etc.). Using the albedo reflection and the subsequent short-circuit current density, the conversion efficiency of the PVK-filtered c-Si HJ bottom sub-cell was improved regardless of the PVK top sub-cell properties. This approach achieved a conversion efficiency exceeding 30%, which is higher than those of both the top and bottom sub-cells. Notably, this efficiency is also greater than the Schockley–Quiesser limit of the c-Si solar cell (approximately 29.43%). The proposed approach has the potential to lower industrial solar cell production costs in the near future.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

Sign in / Sign up

Export Citation Format

Share Document