Magnetic properties of amorphous Co‐Ti thin films with a perpendicular and an in‐plane uniaxial anisotropy

1987 ◽  
Vol 61 (8) ◽  
pp. 3658-3660 ◽  
Author(s):  
G. Suran ◽  
K. Ounadjela ◽  
F. Machizaud

1994 ◽  
Vol 76 (10) ◽  
pp. 6986-6988 ◽  
Author(s):  
T. Yeh ◽  
L. Berg ◽  
B. Witcraft ◽  
J. Falenschek ◽  
J. Yue


SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440022 ◽  
Author(s):  
M. S. GABOR ◽  
M. BELMEGUENAI ◽  
F. ZIGHEM ◽  
S. M. CHERIF ◽  
T. PETRISOR ◽  
...  

This paper presents an overview concerning the electronic, structural and magnetic properties of Co 2 FeAl (CFA) thin films. We first used ab initio calculations of the electronic structure in order to discuss the half-metallicity of this compound. Involving a correlated structural-magnetic analysis, we then illustrate, experimentally, the effect of the thickness as well as the annealing temperature on the magnetic and structural properties of CFA films epitaxially grown on MgO (001) single crystal substrates. The X-ray diffraction shows that in our samples having the CFA(001)[110]// MgO (001)[100] epitaxial relation, the chemical order is enhanced as the thickness and the annealing temperature (T a ) are increased. Ferromagnetic resonance measurements reveal further dynamic magnetic properties. The gyromagnetic factor, estimated at 29.2 GHz/T, is both thickness and annealing temperature independent. The in-plane anisotropy results from the superposition between a dominant fourfold symmetry term, as expected for cubic crystal symmetry of the alloy, and a small uniaxial term. The fourfold anisotropy decreases with increasing thickness and annealing temperature. The exchange stiffness constant is thickness independent but increases with T a . In addition, the effective magnetization varies linearly with T a and with the inverse CFA thickness. This is due to the presence of perpendicular uniaxial anisotropy, estimated around -1.8 erg/cm2 at T a = 600°C and 1.05 erg/cm2 at T a = 265°C, respectively. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions which depend on the CFA thickness and T a . A Gilbert damping coefficient as low as 0.0011 is found for samples annealed at 600°C. Finally, we illustrate that these films can be used as ferromagnetic electrodes in sputtered epitaxial magnetic tunnel junctions (MTJ) based on MgO (001) tunnel barriers. These MTJs show an improvable TMR ratio around 95% at room temperature.



Nanoscale ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 246-257 ◽  
Author(s):  
Wenhui Liang ◽  
Fengxia Hu ◽  
Jian Zhang ◽  
Hao Kuang ◽  
Jia Li ◽  
...  

Anisotropic nonvolatile magnetization and a two-state memory effect is demonstrated in an amorphous SmCo film with uniaxial-anisotropy and hard magnetic properties.





1988 ◽  
Vol 49 (C8) ◽  
pp. C8-991-C8-992 ◽  
Author(s):  
K. Uematsu ◽  
J. S. Shin ◽  
M. Sakuma


1998 ◽  
Vol 22 (4_1) ◽  
pp. 186-189
Author(s):  
M. Matsumoto ◽  
A. Morisako ◽  
Y. Mutoh


2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.



2010 ◽  
Vol 130 (7) ◽  
pp. 621-625
Author(s):  
Hajime Ishioka ◽  
Mari Tahara ◽  
Kohtaro Sato ◽  
Natsumi Oka ◽  
Toshiyuki Shima


2019 ◽  
pp. 20-25
Author(s):  
Anna Chlenova ◽  
◽  
Elizaveta Golubeva ◽  
Iuliia Novoselova ◽  
Ruslan Salikhov ◽  
...  




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