Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

1988 ◽  
Vol 63 (9) ◽  
pp. 4485-4493 ◽  
Author(s):  
P. Enquist ◽  
J. A. Hutchby ◽  
T. J. de Lyon
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Organometallic Vapor Phase Epitaxy ◽  
And Diffusion

Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy

1992 ◽  
Vol 60 (21) ◽  
pp. 2610-2612 ◽  
Author(s):  
F. J. Lamelas ◽  
P. H. Fuoss ◽  
P. Imperatori ◽  
D. W. Kisker ◽  
G. B. Stephenson ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Surface Reconstructions

Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy

1988 ◽  
Vol 53 (12) ◽  
pp. 1101-1103 ◽  
Author(s):  
S. J. Rosner ◽  
Jun Amano ◽  
J. W. Lee ◽  
J. C. C. Fan
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Initial Growth ◽  
Organometallic Vapor Phase Epitaxy

Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy

1997 ◽  
Vol 26 (10) ◽  
pp. 1189-1193 ◽  
Author(s):  
M. L. Warddrip ◽  
M. J. Kappers ◽  
L. Li ◽  
H. Qi ◽  
B. K. Han ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Carbon Tetrachloride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
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