Surface morphology of metalorganic vapor phase epitaxy grown GaAs, GaInP for heterojunction bipolar transistor applications with nitrogen as the carrier gas

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791682 ◽

2002 ◽

Author(s):

C.C. Hsu ◽

J.B. Xu

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

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Performance comparison of metalorganic vapor phase epitaxy grown C-doped GaAs/AlGaAs heterojunction bipolar transistor wafers between AsH3 and trimethylarsenic for the base layer growth

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91169-x ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 947-952 ◽

Author(s):

S. Tanaka ◽

S. Kato ◽

S. Hattori ◽

S. Kojima ◽

M. Ikeda ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Performance Comparison ◽

Layer Growth ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

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Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.361830 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4017 ◽

Author(s):

Kenji Kurishima ◽

Takashi Kobayashi ◽

Hiroshi Ito ◽

Ulrich Gösele

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

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Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.01ad01 ◽

2017 ◽

Vol 57 (1S) ◽

pp. 01AD01 ◽

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Norikazu Nakamura

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy

Applied Physics Express ◽

10.7567/apex.6.105501 ◽

2013 ◽

Vol 6 (10) ◽

pp. 105501 ◽

Author(s):

Tetsuya Akasaka ◽

Yasuyuki Kobayashi ◽

Makoto Kasu ◽

Hideki Yamamoto

Keyword(s):

Vapor Phase ◽

Growth Rates ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Spiral Growth ◽

Carrier Gas ◽

Selective Area ◽

Evaporation Energy

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Metalorganic vapor phase epitaxy growth of ZnSe films using argon carrier gas

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90724-w ◽

1992 ◽

Vol 117 (1-4) ◽

pp. 102-106 ◽

Author(s):

A. Ohki ◽

Y. Kawaguchi ◽

K. Ando ◽

S. Zembutsu

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590250 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2650 ◽

Author(s):

M. Longo

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Growth Mode ◽

Morphology Evolution ◽

Mode Behavior ◽

Surface Morphology Evolution

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Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00594-5 ◽

1997 ◽

Vol 170 (1-4) ◽

pp. 491-496 ◽

Author(s):

W. Taudt ◽

A. Hardt ◽

S. Lampe ◽

H. Hamadeh ◽

M. Heuken

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Reduction of Residual Impurities in Homoepitaxial m -Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018)

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201870324 ◽

2018 ◽

Vol 12 (8) ◽

pp. 1870324

Author(s):

Ousmane I Barry ◽

Kaddour Lekhal ◽

Si-Young Bae ◽

Ho-Jun Lee ◽

Markus Pristovsek ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Carrier Gas ◽

Residual Impurities

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Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.340143 ◽

1988 ◽

Vol 63 (9) ◽

pp. 4485-4493 ◽

Author(s):

P. Enquist ◽

J. A. Hutchby ◽

T. J. de Lyon

Keyword(s):

Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Organometallic Vapor Phase Epitaxy ◽

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Influence of the Carrier Gas Composition on Metalorganic Vapor Phase Epitaxy of Gallium Nitride

Technical Physics Letters ◽

10.1134/1.1920375 ◽

2005 ◽

Vol 31 (4) ◽

pp. 293 ◽

Author(s):

W. V. Lundin

Keyword(s):

Gallium Nitride ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gas Composition ◽

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