Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. II. Resistivity

Journal of Applied Physics ◽

10.1063/1.343795 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4812-4817 ◽

Author(s):

L. Haji ◽

L. Hamedi ◽

B. Loisel ◽

M. Gauneau ◽

P. Joubert ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure

Journal of Applied Physics ◽

10.1063/1.343794 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4806-4811 ◽

Author(s):

P. Joubert ◽

M. Sarret ◽

L. Haji ◽

L. Hamedi ◽

B. Loisel

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Deposition and electrical properties ofinsituphosphorus‐doped silicon films formed by low‐pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.338036 ◽

1987 ◽

Vol 61 (5) ◽

pp. 1898-1904 ◽

Author(s):

Arthur J. Learn ◽

Derrick W. Foster

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1286714 ◽

2000 ◽

Vol 18 (5) ◽

pp. 2389 ◽

Author(s):

P. Temple-Boyer ◽

L. Jalabert ◽

L. Masarotto ◽

J. L. Alay ◽

J. R. Morante

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Nitrogen Doped ◽

Doped Silicon ◽

Pressure Chemical

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Crystallization of amorphous silicon films during low pressure chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.94080 ◽

1983 ◽

Vol 42 (9) ◽

pp. 835-837 ◽

Author(s):

E. Kinsbron ◽

M. Sternheim ◽

R. Knoell

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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ChemInform Abstract: In situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine.

10.1002/chin.199037340 ◽

1990 ◽

Vol 21 (37) ◽

Author(s):

L. D. MADSEN ◽

L. WEAVER

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low‐pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.360468 ◽

1995 ◽

Vol 78 (12) ◽

pp. 6999-7006 ◽

Author(s):

A. T. Voutsas ◽

M. K. Hatalis ◽

J. Boyce ◽

A. Chiang

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Microcrystalline Silicon ◽

Pressure Chemical

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Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas

Journal of Applied Physics ◽

10.1063/1.347215 ◽

1991 ◽

Vol 69 (3) ◽

pp. 1703-1706 ◽

Author(s):

Kenji Nakazawa

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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In Situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine

Journal of The Electrochemical Society ◽

10.1149/1.2086921 ◽

1990 ◽

Vol 137 (7) ◽

pp. 2246-2251 ◽

Author(s):

Lynnette D. Madsen ◽

Louise Weaver

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Low‐pressure chemical vapor deposition of lowin situphosphorus doped silicon thin films

Applied Physics Letters ◽

10.1063/1.105280 ◽

1991 ◽

Vol 59 (12) ◽

pp. 1438-1439 ◽

Author(s):

M. Sarret ◽

A. Liba ◽

O. Bonnaud

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Thin Films ◽

Doped Silicon ◽

Pressure Chemical

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Investigation of the dosage effect on the activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films

Applied Surface Science ◽

10.1016/0169-4332(95)00258-8 ◽

1996 ◽

Vol 92 ◽

pp. 372-377

Author(s):

Fang-Shing Wang ◽

Meng-Jin Tsai ◽

Wen-Koi Lai ◽

Huang-Chung Cheng

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Dosage Effect ◽

Silicon Films ◽

Pressure Chemical

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