Deposition and electrical properties ofinsituphosphorus‐doped silicon films formed by low‐pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.338036 ◽

1987 ◽

Vol 61 (5) ◽

pp. 1898-1904 ◽

Author(s):

Arthur J. Learn ◽

Derrick W. Foster

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure

Journal of Applied Physics ◽

10.1063/1.343794 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4806-4811 ◽

Author(s):

P. Joubert ◽

M. Sarret ◽

L. Haji ◽

L. Hamedi ◽

B. Loisel

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. II. Resistivity

Journal of Applied Physics ◽

10.1063/1.343795 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4812-4817 ◽

Author(s):

L. Haji ◽

L. Hamedi ◽

B. Loisel ◽

M. Gauneau ◽

P. Joubert ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1286714 ◽

2000 ◽

Vol 18 (5) ◽

pp. 2389 ◽

Author(s):

P. Temple-Boyer ◽

L. Jalabert ◽

L. Masarotto ◽

J. L. Alay ◽

J. R. Morante

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Nitrogen Doped ◽

Doped Silicon ◽

Pressure Chemical

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Electrical Properties of 10-50 nm TEOS (Tetraethoxysilane) LPCVD (Low Pressure Chemical Vapor Deposition) Films.

10.21236/ada146416 ◽

1984 ◽

Author(s):

R. H. Vogel ◽

S. R. Butler ◽

F. J. Feigl

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2004.09.025 ◽

2005 ◽

Vol 8 (1-3) ◽

pp. 125-129 ◽

Author(s):

Takehisa Kurosawa ◽

Tomoyuki Komatsu ◽

Masao Sakuraba ◽

Junichi Murota

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Epitaxial Films ◽

Pressure Chemical

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Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties

Applied Physics Letters ◽

10.1063/1.106962 ◽

1992 ◽

Vol 60 (2) ◽

pp. 198-200 ◽

Author(s):

M. Liehr ◽

S. A. Cohen

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2004.09.031 ◽

2005 ◽

Vol 8 (1-3) ◽

pp. 121-124 ◽

Author(s):

Youngcheon Jeong ◽

Masao Sakuraba ◽

Junichi Murota

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Low Pressure ◽

Epitaxial Films ◽

Pressure Chemical

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Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si2H6

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.305 ◽

1994 ◽

Vol 37-38 ◽

pp. 305-310 ◽

Author(s):

E. Campo ◽

J.P. Guillemet ◽

J.J. Pedroviejo ◽

B. Legros-de Mauduit ◽

E. Scheid

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

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Crystallization of amorphous silicon films during low pressure chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.94080 ◽

1983 ◽

Vol 42 (9) ◽

pp. 835-837 ◽

Author(s):

E. Kinsbron ◽

M. Sternheim ◽

R. Knoell

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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ChemInform Abstract: In situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine.

10.1002/chin.199037340 ◽

1990 ◽

Vol 21 (37) ◽

Author(s):

L. D. MADSEN ◽

L. WEAVER

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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