Enhancing the performance of quantum dots sensitized solar cell by SiO2 surface coating

2010 ◽  
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pp. 233107 ◽  
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Masahiro Miyauchi ◽  
Yu Uemura ◽  
Yan Cui ◽  
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Marta Valledor ◽  
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ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.


2014 ◽  
Vol 35 (6) ◽  
pp. 710-716
Author(s):  
陈云龙 CHEN Yun-long ◽  
郑加金 ZHENG Jia-jin ◽  
蒋宇宏 JIANG Yu-hong

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