The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films

1991 ◽  
Vol 69 (12) ◽  
pp. 8320-8328 ◽  
Author(s):  
M. Kunst ◽  
H.‐C. Neitzert
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Optoelectronic Properties ◽  
Silicon Films ◽  
Hydrogenated Amorphous

Effect of Deposition Temperature on the Photoresponse of Crystallized Hydrogenated Amorphous Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
J. Coleman
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Furnace Annealing ◽  
C 50 ◽  
Hydrogenated Amorphous

ABSTRACTThe deposition temperature of hydrogenated amorphous silicon films deposited by dc glow discharge was found to affect the photoresponse (ratio of the photo to dark conductivity) after crystallization of the film. This effect depended on the crystallization technique. For crystallization by laser annealing, the photoresponse (0.15 - 1.5) increased with increasing deposition temperature (150 - 300 °C) due to the increase in SiH and SiH2 bonding, as shown by infrared spectroscopy. For crystallization by furnace annealing (e.g. 650 °C, 50 h), the photoresponse (0.08 - 0) decreased with increasing deposition temperature (150 - 300 °C) due to the decrease in grain size and crystallinity as shown by x-ray diffraction; the complete loss in hydrogen during furnace annealing made the photoresponse low and the silicon-hydrogen bonding effect immaterial. Thus, laser crystallization at the highest deposition temperature gave the highest photoresponse.

Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias

1991 ◽  
Vol 69 (5) ◽  
pp. 2942-2950 ◽  
Author(s):  
P. Roca i Cabarrocas ◽  
P. Morin ◽  
V. Chu ◽  
J. P. Conde ◽  
J. Z. Liu ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Optoelectronic Properties ◽  
Silicon Films ◽  
Substrate Bias ◽  
Hydrogenated Amorphous ◽  
Negative Substrate Bias

Effect of Deposition Temperature on the Properties of Magnetron Sputtered Hydrogenated Amorphous Silicon Films

1989 ◽  
Vol 28 (Part 1, No. 8) ◽  
pp. 1320-1322 ◽  
Author(s):  
Ratnabali Banerjee ◽  
Debajyoti Das ◽  
A. K. Batabyal ◽  
A. K. Barua
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous
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