Drive‐level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films

1985 ◽  
Vol 47 (4) ◽  
pp. 412-414 ◽  
Author(s):  
C. E. Michelson ◽  
A. V. Gelatos ◽  
J. D. Cohen
1996 ◽  
Vol 420 ◽  
Author(s):  
Florence Y. M. Chan ◽  
Y. W. Lam ◽  
Y. C. Chan ◽  
S. H. Lin ◽  
X. Y. Lin ◽  
...  

AbstractHigh rate deposition of a-Si:H films has become one of the key techniques for low-cost, large-scale production of thin film devices. Hydrogenated amorphous silicon films were fabricated with a thermocatalytic PCVD method of which the deposition rate was up to 1.5 nm/sec. The Heterojunction Monitored Capacitance method was employed to determine the midgap-state densities in the undoped semiconductor film from high frequency C-V characteristics. Experimental results showed that the thermocatalytic PCVD method is an effective way to produce high-rate deposited a-Si:H films.


1983 ◽  
Vol 9 (1-3) ◽  
pp. 295-300
Author(s):  
S. Galassini ◽  
G. Micocci ◽  
C. Pennetta ◽  
A. Rizzo ◽  
A. Tepore ◽  
...  

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas

1983 ◽  
Vol 54 (6) ◽  
pp. 3269-3271 ◽  
Author(s):  
M. Kitagawa ◽  
K. Mori ◽  
S. Ishihara ◽  
M. Ohno ◽  
T. Hirao ◽  
...  

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