Effect of Deposition Temperature on the Photoresponse of Crystallized Hydrogenated Amorphous Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
J. Coleman
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Furnace Annealing ◽  
C 50 ◽  
Hydrogenated Amorphous

ABSTRACTThe deposition temperature of hydrogenated amorphous silicon films deposited by dc glow discharge was found to affect the photoresponse (ratio of the photo to dark conductivity) after crystallization of the film. This effect depended on the crystallization technique. For crystallization by laser annealing, the photoresponse (0.15 - 1.5) increased with increasing deposition temperature (150 - 300 °C) due to the increase in SiH and SiH2 bonding, as shown by infrared spectroscopy. For crystallization by furnace annealing (e.g. 650 °C, 50 h), the photoresponse (0.08 - 0) decreased with increasing deposition temperature (150 - 300 °C) due to the decrease in grain size and crystallinity as shown by x-ray diffraction; the complete loss in hydrogen during furnace annealing made the photoresponse low and the silicon-hydrogen bonding effect immaterial. Thus, laser crystallization at the highest deposition temperature gave the highest photoresponse.

Erbium-Doped A-Si:H Films Fabricated by Standard Pecvd Using Metalorganics

1998 ◽  
Vol 507 ◽  
Author(s):  
N.A. Feoktistov ◽  
V.G. Golubev ◽  
A.V. Medvedev ◽  
A.B. Pevtsov
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Conductivity Ratio ◽  
Photoluminescence Spectra ◽  
Light Emitting ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

ABSTRACT1·54 jim light-emitting erbium-doped hydrogenated amorphous silicon films have been fabricated by standard low temperature (200 – 250 °C) PE CVD technique. The films were doped with erbium during the deposition by making use of a new fluorine-containing metalorganic compound Er(HFA)3*DME [where HFA=CF3C(O)CHC(O)CF3, DME=CH3OCH2CH2OCH3]. Photoluminescence spectra of the a-Si(Er):H films were studied within the range 0·6–1·7 pm at both 77 K and 295 K. A photoconductivity was also detected. The photo- to dark conductivity ratio was on the order of 103.

Influence of Laser Annealing on Hydrogen Bonding in Disordered Silicon Thin Films

2003 ◽  
Vol 762 ◽  
Author(s):  
N. H. Nickel ◽  
K. Brendel
Keyword(s):  
Thin Films ◽  
Hydrogen Bonding ◽  
Low Temperatures ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous ◽  
Hydrogen Effusion

AbstractThe influence of laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a-Si:H) on H bonding is investigated. Depending on the deposition temperature the amorphous starting material contains a H concentration of up to 44 at.%. Laser crystallization lowers the H content significantly. Fully crystallized poly-Si contains H concentrations of up to 17 at.%. This reservoir of hydrogen can be used to passivate additional grain boundary defects by annealing the specimens at low temperatures in vacuum. Information on hydrogen bonding is obtained from hydrogen effusion measurements.

Laser Annealing of Hydrogenated Amorphous Silicon Thick Films

1993 ◽  
Vol 321 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
L. P. Fu ◽  
A. Petrou
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Thick Films ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Laser Mass Spectrometry ◽  
Dc Glow Discharge ◽  
Scan Rate ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon thick films deposited by dc glow discharge on molybdenum substrates were annealed by a pulsed Nd:glass laser. Mass spectrometry showed hydrogen remaining in all the laser annealed films. The amount of hydrogen remaining decreased with decreasing scan rate. The hydrogen evolved upon heating at 365 °C and mainly at 658 °C before laser annealing, but at 365, 575 (Mainly) and 645 °C after laser annealing, indicating weakening of the silicon-hydrogen bonding after laser annealing. The presence of hydrogen inhibited crystallization, as indicated by Raman scattering. The photo and dark conductivity of the film increased by one and three orders of magnitude respectively with increasing laser energy density up to 12 J/cm2 at a fixed scan rate. This Means that the photoresponse was decreased with laser annealing, in spite of the associated increase in crystallinity. This photoresponse decrease is attributed to the hydrogen evolution.

Effect of Deposition Temperature on the Properties of Magnetron Sputtered Hydrogenated Amorphous Silicon Films

1989 ◽  
Vol 28 (Part 1, No. 8) ◽  
pp. 1320-1322 ◽  
Author(s):  
Ratnabali Banerjee ◽  
Debajyoti Das ◽  
A. K. Batabyal ◽  
A. K. Barua
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous
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