Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor
1993 ◽
Vol 11
(3)
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pp. 601
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1989 ◽
Vol 7
(4)
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pp. 680
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1997 ◽
Vol 175-176
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pp. 883-887
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1997 ◽
Vol 175-176
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pp. 613-618
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Keyword(s):
2001 ◽
Vol 227-228
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pp. 1049-1052
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