The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes
1990 ◽
Vol 68
(1)
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pp. 347-350
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J. Pamulapati
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R. Lai
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G. I. Ng
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Y. C. Chen
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P. R. Berger
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...
1991 ◽
Vol 196
(2)
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pp. 295-303
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J. Zhang
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N.C. Tien
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E.W. Lin
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H.H. Wieder
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W.H. Ku
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...
1990 ◽
Vol 67
(7)
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pp. 3323-3327
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Kevin Chang
◽
Pallab Bhattacharya
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Richard Lai
1993 ◽
Vol 127
(1-4)
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pp. 29-35
◽
Kanji Yoh
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Kazumasa Kiyomi
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Mitsuaki Yano
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Masataka Inoue
1993 ◽
Vol 11
(3)
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pp. 601
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1987 ◽
Vol 5
(3)
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pp. 785
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1990 ◽
Vol 67
(9)
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pp. 4345-4348
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R. Lai
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P. K. Bhattacharya
1991 ◽
Vol 69
(7)
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pp. 3941-3949
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H. Toyoshima
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K. Onda
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E. Mizuki
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N. Samoto
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M. Kuzuhara
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...
1989 ◽
Vol 7
(4)
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pp. 680
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1997 ◽
Vol 175-176
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pp. 883-887
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J.H. Roslund
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O. Zsebők
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G. Swenson
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T.G. Andersson
2011 ◽
Vol 334
(1)
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pp. 113-117
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Kevin Goodman
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Vladimir Protasenko
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Jai Verma
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Tom Kosel
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Grace Xing
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...
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