Reduction of GaAs metal–semiconductor field effect transistor sidegating by ultraviolet/ozone cleanup prior to molecular-beam epitaxial growth

1989 ◽  
Vol 7 (4) ◽  
pp. 680 ◽  
Author(s):  
W. R. Hitchens
Keyword(s):  
Epitaxial Growth ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Molecular Beam Epitaxial ◽  
Effect Transistor ◽  
Molecular Beam Epitaxial Growth

Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

1993 ◽  
Vol 63 (16) ◽  
pp. 2219-2221 ◽  
Author(s):  
J. H. Burroughes ◽  
M. L. Leadbeater ◽  
M. P. Grimshaw ◽  
R. J. Evans ◽  
D. A. Ritchie ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth ◽  
Effect Transistor

An MOS field‐effect transistor fabricated on a molecular‐beam epitaxial silicon layer

1979 ◽  
Vol 34 (11) ◽  
pp. 740-741 ◽  
Author(s):  
Y. Katayama ◽  
Y. Shiraki ◽  
K. L. I. Kobayashi ◽  
K. F. Komatsubara ◽  
N. Hashimoto
Keyword(s):  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Silicon Layer ◽  
Epitaxial Silicon ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Silicon Layer ◽  
Effect Transistor

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth
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