In0.2Ga0.8As single strained quantum well lasers with GaAs/AlGaAs short‐period superlattice barrier layers grown by molecular beam epitaxy
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1995 ◽
Vol 150
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pp. 1344-1349
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1996 ◽
Vol 11
(12)
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pp. 1923-1926
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1994 ◽
Vol 33
(Part 1, No. 1B)
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pp. 804-810
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1995 ◽
Vol 38
(5)
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pp. 1105-1106
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1998 ◽
Vol 13
(8)
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pp. 936-940
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