High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 1923-1926 ◽  
Author(s):  
Mika Toivonen ◽  
Pekka Savolainen ◽  
Markus Pessa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Quantum Well

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

2004 ◽  
Vol 96 (1) ◽  
pp. 44-48 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Masataka Ohta ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Surfactant Effect ◽  
Strained Quantum Well ◽  
Highly Strained ◽  
Nm Range

High-performance 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

2002 ◽  
Author(s):  
Wei Li ◽  
Chang S. Peng ◽  
Tomi Jouhti ◽  
Janne Konttinen ◽  
Emil-Mihai Pavelescu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well

600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 804-810 ◽  
Author(s):  
Ichirou Nomura ◽  
Katsumi Kishino ◽  
Akihiko Kikuchi ◽  
Yawara Kaneko
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Strained Quantum Well ◽  
Nm Range
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