Substrate heating influence on the deposition rate of oxides during pulsed laser deposition in ambient gas

2011 ◽  
Vol 98 (10) ◽  
pp. 101501 ◽  
Author(s):  
S. Amoruso ◽  
C. Aruta ◽  
R. Bruzzese ◽  
X. Wang ◽  
U. Scotti di Uccio
Keyword(s):  
Pulsed Laser Deposition ◽  
Deposition Rate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Substrate Heating ◽  
Ambient Gas

Evolution of the deposition rate during pulsed laser deposition of hydroxyapatite coatings and its relation with target morphology

2001 ◽  
Vol 72 (5) ◽  
pp. 613-618 ◽  
Author(s):  
J.M. Fernández-Pradas ◽  
L. Clèries ◽  
P. Serra ◽  
G. Sardin ◽  
J.L. Morenza
Keyword(s):  
Pulsed Laser Deposition ◽  
Deposition Rate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Hydroxyapatite Coatings

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Influence of ambient gas on diamond-like carbon films prepared by KrF pulsed laser deposition

2001 ◽  
Vol 10 (3-7) ◽  
pp. 900-904 ◽  
Author(s):  
Kenji Ebihara ◽  
Toshiyuki Nakamiya ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Shin-ichi Aoqui
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Ambient Gas

Growth of YBa2Cu3O7-deltathin films in pulsed laser deposition: influence of target, substrate and deposition rate

2000 ◽  
Vol 13 (3) ◽  
pp. 262-272 ◽  
Author(s):  
G A Farnan ◽  
M P McCurry ◽  
C C Smith ◽  
R J Turner ◽  
D G Walmsley
Keyword(s):  
Pulsed Laser Deposition ◽  
Deposition Rate ◽  
Pulsed Laser ◽  
Laser Deposition

Modeling of Film Growth in Pulsed Laser Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Tyunin
Keyword(s):  
Growth Rate ◽  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Film Growth ◽  
Surface Film ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ambient Gas ◽  
Deposited Films

ABSTRACTFilm growth in pulsed laser deposition (PLD) is described as a process of sorption of ablated species on the substrate surface. Film growth rate and composition are qualitatively analyzed as a function of laser fluence and ambient gas pressure. As an example, analysis of the film composition is carried out for BiSrCaCuO and PbZrTiO pulsed laser deposited films.

Atomic Peening Effect of Ambient Gas on Platinum Films Grown on Amorphous Substrates by Pulsed Laser Deposition

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2629-2633 ◽  
Author(s):  
Tae Yeong Koo ◽  
Ki-Bong Lee ◽  
Yoon-Hee Jeong ◽  
Kwang Yong Kang
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Amorphous Substrates ◽  
Ambient Gas

Fabrication of TiNi shape memory alloy thin films by pulsed-laser deposition

2002 ◽  
Vol 17 (2) ◽  
pp. 279-283 ◽  
Author(s):  
X. Y. Chen ◽  
Y. F. Lu ◽  
Z. M. Ren ◽  
S. Zhu
Keyword(s):  
Thin Films ◽  
Shape Memory Alloy ◽  
Substrate Temperature ◽  
Shape Memory ◽  
Pulsed Laser Deposition ◽  
Deposition Rate ◽  
Crystallization Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Composition Control

Thin films of TiNi shape memory alloy have been prepared by pulsed-laser deposition at different substrate temperatures. The stoichiometry and crystallinity of the deposited films as functions of the substrate temperature were investigated. The deposition rate, surface morphology, crystallization temperature, and phase transformation behavior of the films were studied. It was found that both the substrate temperature and the laser fluence play important roles in the composition control and crystallization of the films. The deposition rate is of the order of 10−2 nm/pulse. The Ni content ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous Ti–51.5 at.% Ni films is around 460 °C. The activation energy of the crystallization process was determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti–51.5 at.% Ni film was determined to be −20.8 °C.

Epitaxial growth of Ge-Sb-Te films on KCl by high deposition rate pulsed laser deposition

2014 ◽  
Vol 115 (21) ◽  
pp. 213504 ◽  
Author(s):  
E. Thelander ◽  
J. W. Gerlach ◽  
U. Ross ◽  
F. Frost ◽  
B. Rauschenbach
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Deposition Rate
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