scholarly journals Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

2011 ◽  
Vol 98 (14) ◽  
pp. 142104 ◽  
Author(s):  
Mingyun Yuan ◽  
Feng Pan ◽  
Zhen Yang ◽  
T. J. Gilheart ◽  
Fei Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Sige Quantum Dot

Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor

2012 ◽  
Vol 101 (14) ◽  
pp. 142103 ◽  
Author(s):  
Mingyun Yuan ◽  
Zhen Yang ◽  
D. E. Savage ◽  
M. G. Lagally ◽  
M. A. Eriksson ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Radio Frequency ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Charge Sensing ◽  
Sige Quantum Dot

scholarly journals A graphene quantum dot with a single electron transistor as an integrated charge sensor

2010 ◽  
Vol 97 (26) ◽  
pp. 262113 ◽  
Author(s):  
Lin-Jun Wang ◽  
Gang Cao ◽  
Tao Tu ◽  
Hai-Ou Li ◽  
Cheng Zhou ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Graphene Quantum Dot

TRIPLE-TUNNEL JUNCTION SINGLE ELECTRON TRANSISTOR (TTJ-SET)

2011 ◽  
Vol 25 (17) ◽  
pp. 1487-1501
Author(s):  
ALI SHAHHOSEINI ◽  
KAMYAR SAGHAFI ◽  
MOHAMMAD KAZEM MORAVVEJ-FARSHI ◽  
RAHIM FAEZ
Keyword(s):  
Monte Carlo ◽  
Quantum Dot ◽  
Excellent Agreement ◽  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Macro Model ◽  
Half Wave

We propose a triple-tunnel junction single electron transistor (TTJ-SET). The proposed structure consists of a metallic quantum-dot island that is capacitive coupled to a gate contact and surrounded by three tunnel junctions. To the best of our knowledge, this is the first instance of introducing this new structure that is suitable for both digital and analog applications. I–V D characteristics of the proposed TTJ-SET, simulated by a HSPICE macro model for various gate voltages, are in excellent agreement with those obtained by SIMON, which is a Monte-Carlo based simulator. We show how one can design a digital inverter by using a single TTJ-SET. We also show that, under suitable conditions, a TTJ-SET can operate as a full- or half-wave analog rectifier.

Large Electron Addition Energy above 250 meV in a Silicon Quantum Dot in a Single-Electron Transistor

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 2010-2012 ◽  
Author(s):  
Masumi Saitoh ◽  
Nobuyoshi Takahashi ◽  
Hiroki Ishikuro ◽  
Toshiro Hiramoto
Keyword(s):  
Quantum Dot ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot

Transport spectroscopy of the ultrasmall silicon quantum dot in a single-electron transistor

2001 ◽  
Vol 79 (13) ◽  
pp. 2025-2027 ◽  
Author(s):  
Masumi Saitoh ◽  
Toshiki Saito ◽  
Takashi Inukai ◽  
Toshiro Hiramoto
Keyword(s):  
Quantum Dot ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot
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