Dispersion of electron g-factor with optical transition energy in (In,Ga)As/GaAs self-assembled quantum dots

A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that for doped quantum dots, many-particle configuration interaction is also critical to accurately capture the optical transitions of the system. The sophisticated models presented in this work reproduce the experimental results for both undoped and doped quantum dot systems. The effects of alloy mole fraction of the strain controlling layer and quantum dot dimensions are discussed. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and a larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to the changes in the diameter, but almost insensitive to the changes in dot height. This behavior is explained by a detailed sensitivity analysis of different factors affecting the optical transition energy.

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Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation

Journal of Shanghai University (English Edition) ◽

10.1007/s11741-010-0202-3 ◽

2010 ◽

Vol 14 (2) ◽

pp. 83-88

Author(s):

Li-feng Bian ◽

Zhao Jin

Keyword(s):

Quantum Dots ◽

Optical Transition ◽

Resonant Excitation ◽

Carrier Relaxation ◽

Cap Layer ◽

Self Assembled

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Interband optical transition energy and oscillator strength in a lead based CdSe quantum dot quantum well heterostructure

10.1063/1.4918110 ◽

2015 ◽

Author(s):

S. N. Saravanamoorthy ◽

A. John Peter

Keyword(s):

Quantum Dot ◽

Quantum Well ◽

Oscillator Strength ◽

Transition Energy ◽

Optical Transition ◽

Optical Transition Energy ◽

Interband Optical Transition ◽

Cdse Quantum Dot

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Photoreflectance Investigation of Inas/Gaas Self-Assembled Quantum Dots Grown by Almbe

MRS Proceedings ◽

10.1557/proc-583-99 ◽

1999 ◽

Vol 583 ◽

Author(s):

M. Geddol ◽

R. Ferrinm ◽

G. Guizzetti ◽

M. Patrini ◽

S. Franchi ◽

...

Keyword(s):

Quantum Dots ◽

Ground State ◽

Molecular Beam ◽

State Transition ◽

Transition Energy ◽

Atomic Layer ◽

Optical Response ◽

Spectral Features ◽

Modulation Spectroscopy ◽

Self Assembled

AbstractPhotoreflectance measurements have been performed in the 0.8–1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. The spectral features due to the QD optical response were analyzed by using lineshape models characteristic of modulation spectroscopy of confined systems. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and it is shown that Coulomb interaction can account for the observed different behavior of the ensemble optical response of QD families characterized by different morphologies and coexisting in the same sample.

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