Nanometer‐scale modification and characterization of lead‐telluride surface by scanning tunneling microscope at 4.2 K

1996 ◽  
Vol 79 (5) ◽  
pp. 2435-2438
Author(s):  
D. N. Davydov ◽  
Yu. B. Lyanda‐Geller ◽  
S. A. Rykov ◽  
H. Hancotte ◽  
R. Deltour ◽  
...  
1989 ◽  
Vol 55 (17) ◽  
pp. 1727-1729 ◽  
Author(s):  
T. R. Albrecht ◽  
M. M. Dovek ◽  
M. D. Kirk ◽  
C. A. Lang ◽  
C. F. Quate ◽  
...  

1999 ◽  
Vol 75 (9) ◽  
pp. 1237-1239 ◽  
Author(s):  
C. Goletti ◽  
A. Sgarlata ◽  
N. Motta ◽  
P. Chiaradia ◽  
R. Paolesse ◽  
...  

1992 ◽  
Vol 286 ◽  
Author(s):  
Teresa D. Golden ◽  
Ryne P. Raffaelle ◽  
Richard J. Phillips ◽  
Jay A. Switzer

ABSTRACTWe have imaged fractured cross-sections of electrodeposited ceramic oxides based on the TI-Pb-O system using a scanning tunneling microscope. The goal of this work is to measure both the modulation wavelength and compositional profile of the superlattices by mapping out the electronic properties in real space on a nanometer scale. Fourier analysis was done on STM images of all superlattices to yield the modulation wavelength. The modulation wavelength from STM was then compared with those obtained, by Faraday calculation and x-ray diffraction. The STM can be used to design “better” superlattices. We have found that the composition profile in superlattices deposited by modulating the potential was more square than in superlattices deposited by modulating the current.


2001 ◽  
Vol 393 (1-2) ◽  
pp. 325-328 ◽  
Author(s):  
Hitoshi Suzuki ◽  
Simon Berner ◽  
Michael Brunner ◽  
Hisao Yanagi ◽  
Derck Schlettwein ◽  
...  

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.


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