Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors
2019 ◽
pp. 391-402
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2020 ◽
Vol 67
(5)
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pp. 1939-1945
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2013 ◽
Vol 52
(8S)
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pp. 08JN08
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2019 ◽
Vol 58
(SC)
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pp. SCCD21
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